Power Driver Modules | Discrete Semiconductor Components

Image Part Number Description / PDF Quantity Rfq
IXIDM1401_1505_O

IXIDM1401_1505_O

Wickmann / Littelfuse

POWER MODULE H-BRIDGE 15V 10A

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IXIDM1401_1515_O

IXIDM1401_1515_O

Wickmann / Littelfuse

DVR MOD +15V -15V 10A OPEN FRAME

0

IXIDM1403_1505_M

IXIDM1403_1505_M

Wickmann / Littelfuse

POWER MODULE

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IXIDM1401_1515_M

IXIDM1401_1515_M

Wickmann / Littelfuse

DVR MOD +15V -15V 10A MOLDED

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IXIDM1403_1515_M

IXIDM1403_1515_M

Wickmann / Littelfuse

DVR MOD +15V -15V 30A MOLDED

0

IXIDM1403_1515_O

IXIDM1403_1515_O

Wickmann / Littelfuse

DVR MOD +15V -15V 30A OPEN FRAME

0

IXA40PF1200TDHGLB

IXA40PF1200TDHGLB

Wickmann / Littelfuse

IGBT PHASELEG 1200V 40A SMPD

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IXA40PF1200TDHGLB-TRR

IXA40PF1200TDHGLB-TRR

Wickmann / Littelfuse

IGBT PHASELEG 1200V 40A SMPD

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IXIDM1401_1505_M

IXIDM1401_1505_M

Wickmann / Littelfuse

POWER MODULE

0

IXIDM1401

IXIDM1401

Wickmann / Littelfuse

ISOLATED GATE DRIVER

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Power Driver Modules | Discrete Semiconductor Components

1. Overview

Discrete Semiconductor Power Driver Modules are integrated electronic components designed to control and drive high-power semiconductor devices such as MOSFETs, IGBTs, and bipolar transistors. These modules act as intermediaries between low-power control circuits (e.g., microcontrollers) and high-power loads, enabling precise switching and power management. They are critical in modern power electronics systems, ensuring efficiency, reliability, and safety in applications ranging from industrial automation to renewable energy systems.

2. Major Types and Functional Classification

Type Functional Characteristics Application Examples
MOSFET Driver Modules High-speed switching, low on-resistance, suitable for DC-DC converters and motor drives Electric vehicle (EV) battery management systems
IGBT Driver Modules High-voltage/current handling, soft-switching capabilities Industrial motor drives, traction inverters
Bipolar Transistor Drivers High current gain, linear operation mode Analog amplifiers, legacy power systems
Gate Driver ICs Integrated logic-to-power signal conversion, galvanic isolation options Switching power supplies, LED lighting systems

3. Structure and Composition

Typical modules consist of:

  • Die Attach: Silicon dies for MOSFET/IGBT chips bonded to a conductive substrate
  • Substrate: Aluminum oxide (Al O ) or silicon nitride (Si N ) for thermal/electrical insulation
  • Encapsulation: Molded epoxy resin or ceramic housing for environmental protection
  • Terminals: Copper/Aluminum leads or surface-mount pads for PCB integration
  • Thermal Interface: Phase-change materials or thermal pads for heatsink attachment

 

4. Key Technical Specifications

Parameter Description
Max Voltage Rating (Vds/Vce) 50V 1700V, determines application suitability (e.g., 600V for EVs, 1700V for rail transport)
Peak Output Current (Ipeak) 5A 100A, impacts switching performance and thermal design
Power Dissipation (Pd) 1W 200W, defines cooling requirements
Operating Temperature -40 C to +175 C, critical for automotive/industrial environments
Isolation Voltage 2.5kV 10kV, safety requirement for high-voltage systems
Short-Circuit Withstand 10 s 10ms, protects against fault conditions

5. Application Fields

  • Industrial: Servo motor drives, CNC machine tools, welding inverters
  • Automotive: On-board chargers (OBC), traction inverters, 48V mild hybrid systems
  • Renewables: Solar string inverters, wind turbine converters
  • Consumer: High-end kitchen appliances, robotic vacuum cleaners
  • Case Study: A 3.6kW industrial motor drive using Infineon's 1EDN75120B gate driver achieved 98.5% efficiency.

6. Leading Manufacturers and Products

Manufacturer Representative Product Key Features
Infineon Technologies 1EDN75120B 1200V IGBT driver with DESAT protection, 40ns propagation delay
STMicroelectronics STGP10CH60DF 600V/10A SiC MOSFET power module for fast charging stations
ON Semiconductor NCP51820 High-frequency (200kHz) gate driver for LLC resonant converters
Texas Instruments UCC21750 Isolated gate driver with integrated current sensing for EV inverters

7. Selection Recommendations

Key considerations include:

  • Match voltage/current ratings with system requirements (add 20% safety margin)
  • Choose packaging (TO-247, D2PAK, or surface-mount) based on thermal needs
  • Verify compliance with standards (e.g., AEC-Q101 for automotive)
  • Assess protection features (overcurrent, thermal shutdown)
  • Evaluate driver IC compatibility for gate charge requirements

 

8. Industry Trends

Future developments include:

  • Adoption of wide-bandgap (WBG) semiconductors (SiC/GaN) for higher efficiency
  • Integration of sensors and digital interfaces (smart power modules)
  • Advanced packaging techniques (double-sided cooling, silver sintering)
  • Increased demand for automotive applications (EVs, 48V systems)
  • Standardization of isolation requirements per IEC 61800-5-1

 

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