Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
DZ2736000L

DZ2736000L

Panasonic

DIODE ZENER 36V 120MW SSSMINI2

4658

DZ2J06800L

DZ2J06800L

Panasonic

DIODE ZENER 6.8V 200MW SMINI2

3

MAZ20750AG

MAZ20750AG

Panasonic

DIODE ZENER 7.5V 1W DO41

5322

DZ2J05600L

DZ2J05600L

Panasonic

DIODE ZENER 5.6V 200MW SMINI2

2085

MAZ43300MF

MAZ43300MF

Panasonic

DIODE ZENER 33V 370MW DO34

443

MAZ247000G

MAZ247000G

Panasonic

DIODE ZENER 47V 1W DO41

4049

MAZS130GML

MAZS130GML

Panasonic

DIODE ZENER 13V 150MW SSMINI2

5728

MAZ43000MF

MAZ43000MF

Panasonic

DIODE ZENER 30V 370MW DO34

533

MAZS3600ML

MAZS3600ML

Panasonic

DIODE ZENER 36V 150MW SSMINI2

1818

MAZD16000L

MAZD16000L

Panasonic

DIODE ZENER 16V 120MW SSSMINI2

17315

DZ2422000L

DZ2422000L

Panasonic

DIODE ZENER 22V 2W TMINIP2

1830

MAZ41600MF

MAZ41600MF

Panasonic

DIODE ZENER 16V 370MW DO34

736

DZ2J062M0L

DZ2J062M0L

Panasonic

DIODE ZENER 6.2V 200MW SMINI2

1

MAZ33600ML

MAZ33600ML

Panasonic

DIODE ZENER 36V 200MW MINI3

4643

MAZ30430ML

MAZ30430ML

Panasonic

DIODE ZENER 4.3V 200MW MINI3

17760

DZ2J220M0L

DZ2J220M0L

Panasonic

DIODE ZENER 22V 200MW SMINI2

802

DZ2J14000L

DZ2J14000L

Panasonic

DIODE ZENER 14V 200MW SMINI2

24

MAZ256000G

MAZ256000G

Panasonic

DIODE ZENER 56V 1W DO41

146

DZ2J11000L

DZ2J11000L

Panasonic

DIODE ZENER 11V 200MW SMINI2

2373

MAZ20620AG

MAZ20620AG

Panasonic

DIODE ZENER 6.2V 1W DO41

5448

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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