| Image | Part Number | Description / PDF | Quantity | Rfq |
|---|---|---|---|---|
 |
NTE Electronics, Inc. |
DIODE ZENER 25V 5W DO35 |
708 |
|
 |
NTE Electronics, Inc. |
DIODE ZENER 24V 50W DO5 |
19 |
|
 |
NTE Electronics, Inc. |
DIODE ZENER 3.9V 5W AXIAL |
231 |
|
 |
NTE Electronics, Inc. |
DIODE ZENER 9.1V 500 MV DO35 |
845 |
|
 |
NTE Electronics, Inc. |
DIODE ZENER 13V 5W AXIAL |
80 |
|
 |
NTE Electronics, Inc. |
DIODE ZENER 12V 10W DO4 |
156 |
|
 |
NTE Electronics, Inc. |
DIODE ZENER 68V 500MW |
26 |
|
 |
NTE Electronics, Inc. |
DIODE ZENER 39V 5W AXIAL |
143 |
|
 |
NTE Electronics, Inc. |
DIODE ZENER 120V 10W DO4 |
8 |
|
 |
NTE Electronics, Inc. |
DIODE ZENER 30V 10W DO4 |
31 |
|
 |
NTE Electronics, Inc. |
DIODE ZENER 47V 5W AXIAL |
172 |
|
 |
NTE Electronics, Inc. |
DIODE ZENER 4.3V 5W AXIAL |
8 |
|
 |
NTE Electronics, Inc. |
DIODE ZENER 30V 5W DO35 |
374 |
|
 |
NTE Electronics, Inc. |
DIODE ZENER 4.3V 1W DO35 |
604 |
|
Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.
| Type | Functional Characteristics | Application Examples |
|---|---|---|
| Low-Voltage Zener (2.4V-10V) | Utilizes Zener effect with sharp breakdown characteristics | Voltage references, comparator circuits |
| Mid-Voltage Zener (10V-100V) | Combines Zener and avalanche breakdown | Power supply regulation, clamping circuits |
| High-Voltage Zener (>100V) | Primarily avalanche breakdown mechanism | High-voltage protection, industrial controls |
| Surface-Mount (SMD) Zener | Miniaturized packaging for automated assembly | Mobile devices, wearable electronics |
Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.
| Parameter | Description | Importance |
|---|---|---|
| Zener Voltage (Vz) | Specified reverse breakdown voltage at test current | Determines operating voltage level |
| Power Dissipation (Pz) | Maximum power handling capability | Defines thermal management requirements |
| Dynamic Impedance (Zz) | AC resistance affecting voltage stability | Impacts regulation performance |
| Temperature Coefficient (TC) | Voltage drift per degree Celsius | Critical for precision applications |
| Reverse Leakage Current (Ir) | Off-state current at rated voltage | Affects power efficiency |
Key industries include:
Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.
| Manufacturer | Representative Product | Key Specifications |
|---|---|---|
| TI (Texas Instruments) | LM4040-N | 1.2V-10V, 0.1% initial tolerance, SOT-23 |
| ON Semiconductor | 1N47xx Series | 3.3V-400V, 1W-50W power range |
| STMicroelectronics | BZX84-C5V1 | 5.1V, 300mW, 2% tolerance, SOD-323 |
| Nexperia | PXZGxx Series | 2.5V-75V, AEC-Q101 automotive qualification |
Key considerations:
Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts