Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
BZT52-B16J

BZT52-B16J

Nexperia

DIODE ZENER 16V 590MW SOD123

53977

BZX84-B51,215

BZX84-B51,215

Nexperia

DIODE ZENER 51V 250MW TO236AB

69000

BZV85-C12,133

BZV85-C12,133

Nexperia

DIODE ZENER 12V 1W DO41

619

PLVA650A,215

PLVA650A,215

Nexperia

DIODE ZENER 5V 250MW TO236AB

20021

BZT52-C4V7,118

BZT52-C4V7,118

Nexperia

ZENER DIODE

20000

TDZ2V4JF

TDZ2V4JF

Nexperia

DIODE ZENER 2.4V SOD323F

0

BZT52H-B3V9,115

BZT52H-B3V9,115

Nexperia

DIODE ZENER 3.9V 375MW SOD123F

2745

NZX5V6A,133

NZX5V6A,133

Nexperia

DIODE ZENER 5.6V 500MW ALF2

8129

BZX84J-B6V8,115

BZX84J-B6V8,115

Nexperia

DIODE ZENER 6.8V 550MW SOD323F

4675

PZU3.9B,115

PZU3.9B,115

Nexperia

DIODE ZENER 3.9V 310MW SOD323F

0

BZV90-C5V1,135

BZV90-C5V1,135

Nexperia

DIODE ZENER 5.1V 1.5W SOT223

3387

PZU7.5B2L,315

PZU7.5B2L,315

Nexperia

DIODE ZENER 7.5V 250MW DFN1006-2

9205

BZT52H-B24,115

BZT52H-B24,115

Nexperia

DIODE ZENER 24V 375MW SOD123F

387

BZT52-C7V5X

BZT52-C7V5X

Nexperia

DIODE ZENER 7.45V 350MW SOD123

7350

BZX884S-B62YL

BZX884S-B62YL

Nexperia

BZX884S-B62/SOD882BD/XSON2

10000

BZX384-B62Z

BZX384-B62Z

Nexperia

DIODE ZENER 62V SOD323

0

BZT52-B36J

BZT52-B36J

Nexperia

DIODE ZENER 36V 590MW SOD123

6377

PZU4.7B2,135

PZU4.7B2,135

Nexperia

DIODE ZENER 4.7V 310MW SOD323F

0

BZV55-C4V7,135

BZV55-C4V7,135

Nexperia

DIODE ZENER 4.7V 500MW LLDS

0

NZX11A,133

NZX11A,133

Nexperia

DIODE ZENER 11V 500MW ALF2

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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