Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
BZX79-B56,113

BZX79-B56,113

Nexperia

DIODE ZENER 56V 400MW ALF2

0

BZX79-C4V7,113

BZX79-C4V7,113

Nexperia

DIODE ZENER 4.7V 400MW ALF2

8246

BZT52-B3V6J

BZT52-B3V6J

Nexperia

DIODE ZENER 3.6V 590MW SOD123

1007

BZX884S-C75YL

BZX884S-C75YL

Nexperia

BZX884S-C75/SOD882BD/XSON2

0

BZX384-B33F

BZX384-B33F

Nexperia

DIODE ZENER 33V SOD323

0

BZV55-B22,135

BZV55-B22,135

Nexperia

DIODE ZENER 22V 500MW LLDS

0

BZT52H-B47,115

BZT52H-B47,115

Nexperia

DIODE ZENER 47V 375MW SOD123F

1328

NZH12B,115

NZH12B,115

Nexperia

DIODE ZENER 12V 500MW SOD123F

4911

BZX884S-B10YL

BZX884S-B10YL

Nexperia

BZX884S-B10/SOD882BD/XSON2

0

BZV49-C3V3,115

BZV49-C3V3,115

Nexperia

DIODE ZENER 3.3V 1W SOT89

4596

BZX79-C8V2,133

BZX79-C8V2,133

Nexperia

DIODE ZENER 8.2V 400MW ALF2

4979

BZV49-C24,115

BZV49-C24,115

Nexperia

DIODE ZENER 24V 1W SOT89

9405

BZX84J-C12/ZL115

BZX84J-C12/ZL115

Nexperia

DIODE ZENER

9000

BZT52-C56J

BZT52-C56J

Nexperia

DIODE ZENER 56V 350MW SOD123

8338

PZU3.6B2,115

PZU3.6B2,115

Nexperia

DIODE ZENER 3.6V 310MW SOD323F

2825

BZX79-C24,133

BZX79-C24,133

Nexperia

DIODE ZENER 24V 400MW ALF2

15764

BZX585-C51,115

BZX585-C51,115

Nexperia

DIODE ZENER 51V 300MW SOD523

0

SZMM3Z3V0T1GX

SZMM3Z3V0T1GX

Nexperia

SZMM3Z3V0T1G/SOD323/SOD2

0

BZV55-C4V3,115

BZV55-C4V3,115

Nexperia

DIODE ZENER 4.3V 500MW LLDS

0

NZX10B,133

NZX10B,133

Nexperia

DIODE ZENER 10V 500MW ALF2

3242

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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