Diodes - Zener

Diodes - Zener - Single

Part Number	Description / PDF	Quantity
1N5226BBULK EIC Semiconductor, Inc.	DIODE ZENER 3.3V 500MW DO35	5000
1N4733AG EIC Semiconductor, Inc.	DIODE ZENER 5.1V 1W DO41	1000
1N4741AT/R EIC Semiconductor, Inc.	DIODE ZENER 11V 1W DO41	5000
1N5250BBULK EIC Semiconductor, Inc.	DIODE ZENER 20V 500MW DO35	4000
1N757ABULK EIC Semiconductor, Inc.	ZENER 500MW, CASE TYPE: DO-35 GL	4000
1N4743ABULK EIC Semiconductor, Inc.	DIODE ZENER 13V 1W DO41	10000
1N5229BT/R EIC Semiconductor, Inc.	DIODE ZENER 4.3V 500MW DO35	10000
1N756AT/R EIC Semiconductor, Inc.	ZENER 500MW, CASE TYPE: DO-35 GL	10000
3EZ150D5 EIC Semiconductor, Inc.	ZENER 3W, CASE TYPE: DO-41	1000
1N5381BBULK EIC Semiconductor, Inc.	DIODE ZENER 130V 5W DO15	4000
1N746ABULK EIC Semiconductor, Inc.	ZENER 500MW, CASE TYPE: DO-35 GL	1000
SZ6515 EIC Semiconductor, Inc.	DIODE ZENER 15V 5W DO214AA	3000
1N5338A EIC Semiconductor, Inc.	DIODE ZENER 5.1V 5W DO15	1000
1N5246BBULK EIC Semiconductor, Inc.	DIODE ZENER 16V 500MW DO35	4000
1N4744AT/R EIC Semiconductor, Inc.	DIODE ZENER 15V 1W DO41	100000
1N754ABULK EIC Semiconductor, Inc.	ZENER 500MW, CASE TYPE: DO-35 GL	4000
SZ6015 EIC Semiconductor, Inc.	DIODE ZENER 15V 5W DO214AA	5000
1N5253BBULK EIC Semiconductor, Inc.	DIODE ZENER 25V 500MW DO35	4500
2EZ15D5BULK EIC Semiconductor, Inc.	ZENER 2W, CASE TYPE: DO-41	5000
1N4752ABULK EIC Semiconductor, Inc.	DIODE ZENER 33V 1W DO41	9000

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Low-Voltage Zener (2.4V-10V)	Utilizes Zener effect with sharp breakdown characteristics	Voltage references, comparator circuits
Mid-Voltage Zener (10V-100V)	Combines Zener and avalanche breakdown	Power supply regulation, clamping circuits
High-Voltage Zener (>100V)	Primarily avalanche breakdown mechanism	High-voltage protection, industrial controls
Surface-Mount (SMD) Zener	Miniaturized packaging for automated assembly	Mobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

Parameter	Description	Importance
Zener Voltage (Vz)	Specified reverse breakdown voltage at test current	Determines operating voltage level
Power Dissipation (Pz)	Maximum power handling capability	Defines thermal management requirements
Dynamic Impedance (Zz)	AC resistance affecting voltage stability	Impacts regulation performance
Temperature Coefficient (TC)	Voltage drift per degree Celsius	Critical for precision applications
Reverse Leakage Current (Ir)	Off-state current at rated voltage	Affects power efficiency

5. Application Fields

Key industries include:

Power electronics (switching power supplies, DC-DC converters)
Industrial automation (PLC voltage references, sensor interfaces)
Consumer electronics (mobile chargers, LED drivers)
Automotive systems (battery management, onboard charging)
Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
TI (Texas Instruments)	LM4040-N	1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor	1N47xx Series	3.3V-400V, 1W-50W power range
STMicroelectronics	BZX84-C5V1	5.1V, 300mW, 2% tolerance, SOD-323
Nexperia	PXZGxx Series	2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

Determine required Vz with 5% margin over operating current range
Calculate Pz = Vz maximum expected current
Select package type based on board space and thermal requirements
For precision applications, prioritize TC < 100ppm/ C and low Zz
Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts