Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
BZD27C4V3P-M3-08

BZD27C4V3P-M3-08

Vishay General Semiconductor – Diodes Division

DIODE ZENER 4.3V 800MW DO219AB

0

BZX84C5V6-HE3-18

BZX84C5V6-HE3-18

Vishay General Semiconductor – Diodes Division

DIODE ZENER 5.6V 300MW SOT23-3

1954

1N5236B-TAP

1N5236B-TAP

Vishay General Semiconductor – Diodes Division

DIODE ZENER 7.5V 500MW DO35

16693

TZM5226B-GS08

TZM5226B-GS08

Vishay General Semiconductor – Diodes Division

DIODE ZENER 3.3V 500MW SOD80

14971

1N5241B-TR

1N5241B-TR

Vishay General Semiconductor – Diodes Division

DIODE ZENER 11V 500MW DO35

26357

TZMB51-GS08

TZMB51-GS08

Vishay General Semiconductor – Diodes Division

DIODE ZENER 51V 500MW SOD80

8626

MMSZ5228C-G3-18

MMSZ5228C-G3-18

Vishay General Semiconductor – Diodes Division

DIODE ZENER 3.9V 500MW SOD123

0

ZMY18-GS18

ZMY18-GS18

Vishay General Semiconductor – Diodes Division

DIODE ZENER 18V 1W DO213AB

8378

BZT55B47-GS08

BZT55B47-GS08

Vishay General Semiconductor – Diodes Division

DIODE ZENER 47V 500MW SOD80

0

BZD27C51P-M3-08

BZD27C51P-M3-08

Vishay General Semiconductor – Diodes Division

DIODE ZENER 51V 800MW DO219AB

0

SML4760A-E3/5A

SML4760A-E3/5A

Vishay General Semiconductor – Diodes Division

DIODE ZENER 68V 1W DO214AC

0

ZM4739A-GS18

ZM4739A-GS18

Vishay General Semiconductor – Diodes Division

DIODE ZENER 9.1V 1W DO213AB

8315

PLZ3V9A-G3/H

PLZ3V9A-G3/H

Vishay General Semiconductor – Diodes Division

DIODE ZENER 3.92V 960MW DO219AC

20515

BZD27C5V6P-M-08

BZD27C5V6P-M-08

Vishay General Semiconductor – Diodes Division

DIODE ZENER 5.6V 800MW DO219AB

0

MMSZ4697-G3-18

MMSZ4697-G3-18

Vishay General Semiconductor – Diodes Division

DIODE ZENER 10V 500MW SOD123

0

BZD27C130P-E3-18

BZD27C130P-E3-18

Vishay General Semiconductor – Diodes Division

DIODE ZENER 130V 800MW DO219AB

0

BZX384B47-E3-08

BZX384B47-E3-08

Vishay General Semiconductor – Diodes Division

DIODE ZENER 47V 200MW SOD323

14946

SMZJ3801B-E3/52

SMZJ3801B-E3/52

Vishay General Semiconductor – Diodes Division

DIODE ZENER 33V 1.5W DO214AA

0

MMBZ4624-E3-18

MMBZ4624-E3-18

Vishay General Semiconductor – Diodes Division

DIODE ZENER 4.7V 350MW SOT23-3

0

BZX384B6V8-HE3-18

BZX384B6V8-HE3-18

Vishay General Semiconductor – Diodes Division

DIODE ZENER 6.8V 200MW SOD323

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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