Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
JTX1N4479

JTX1N4479

Semtech

DIODE ZENER 39V 1.5W

0

JTX1N4489US

JTX1N4489US

Semtech

DIODE ZENER 100V 1.5W

0

JTX1N4468US

JTX1N4468US

Semtech

DIODE ZENER 13V 1.5W

0

JTX1N4970US

JTX1N4970US

Semtech

DIODE ZENER 33V 500W

0

JTXV1N4974

JTXV1N4974

Semtech

DIODE ZENER 47V 500W

0

JTX1N4463US

JTX1N4463US

Semtech

DIODE ZENER 8.2V 1.5W

0

JTXV1N4464US

JTXV1N4464US

Semtech

DIODE ZENER 9.1V 1.5W

0

JAN1N6474US.TR

JAN1N6474US.TR

Semtech

DIODE ZENER T DAP 30.5V 1500W SM

0

JTX1N4970

JTX1N4970

Semtech

DIODE ZENER 33V 500W

0

JTX1N4482US.TR

JTX1N4482US.TR

Semtech

DIODE ZENER 51V 1.5W

0

JTX1N4481

JTX1N4481

Semtech

DIODE ZENER 47V 1.5W

0

JTX1N4483US

JTX1N4483US

Semtech

DIODE ZENER 56V 1.5W

0

JTX1N4475US

JTX1N4475US

Semtech

DIODE ZENER 27V 1.5W

0

JTX1N4961

JTX1N4961

Semtech

DIODE ZENER 13V 500W

0

JTX1N4495

JTX1N4495

Semtech

DIODE ZENER 180V 1.5W

0

1N4947

1N4947

Semtech

DIODE ZENER AXIAL

0

JTX1N4977

JTX1N4977

Semtech

DIODE ZENER 62V 500W

0

JTX1N4967US

JTX1N4967US

Semtech

DIODE ZENER 24V 500W

0

JTX1N4465

JTX1N4465

Semtech

DIODE ZENER 10V 1.5W

0

JTXV1N4988US

JTXV1N4988US

Semtech

DIODE ZENER 180V 500W

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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