Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
JTXV1N4975

JTXV1N4975

Semtech

DIODE ZENER 51V 500W

0

JTX1N4968US

JTX1N4968US

Semtech

DIODE ZENER 27V 500W

0

JTX1N4470

JTX1N4470

Semtech

DIODE ZENER 16V 1.5W

0

JTXV1N4474US

JTXV1N4474US

Semtech

DIODE ZENER 24V 1.5W

0

JTX1N4467

JTX1N4467

Semtech

DIODE ZENER 12V 1.5W

0

JTXV1N4495US

JTXV1N4495US

Semtech

DIODE ZENER 180V 1.5W

0

JTX1N4493US

JTX1N4493US

Semtech

DIODE ZENER 150V 1.5W

0

JTX1N4492US.TR

JTX1N4492US.TR

Semtech

DIODE ZENER 130V 1.5W

0

JTXV1N4487

JTXV1N4487

Semtech

DIODE ZENER 82V 1.5W

0

JTX1N4474

JTX1N4474

Semtech

DIODE ZENER 24V 1.5W

0

JTXV1N4960US

JTXV1N4960US

Semtech

DIODE ZENER 12V 500W

0

JTX1N4978US

JTX1N4978US

Semtech

DIODE ZENER 68V 500W

0

JTXV1N4484US

JTXV1N4484US

Semtech

DIODE ZENER 62V 1.5W

0

JTXV1N4970

JTXV1N4970

Semtech

DIODE ZENER 33V 500W

0

JTX1N4488US

JTX1N4488US

Semtech

DIODE ZENER 91V 1.5W

0

JTXV1N4981

JTXV1N4981

Semtech

DIODE ZENER 91V 500W

0

JTXV1N4490

JTXV1N4490

Semtech

DIODE ZENER 110V 1.5W

0

JTX1N4492

JTX1N4492

Semtech

DIODE ZENER 130V 1.5W

0

JTX1N4954

JTX1N4954

Semtech

DIODE ZENER 6.8V 500W

0

1N4464

1N4464

Semtech

DIODE ZENER 9.1V 1.5W AXIAL

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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