Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
BZX84B33

BZX84B33

Rectron USA

DIODE ZENER 33V 350MW SOT-23

0

MM5Z13B

MM5Z13B

Rectron USA

DIODE ZENER 13V 500MW SOD-523

0

SMA5934A

SMA5934A

Rectron USA

DIODE ZENER 24V 1W SMA

0

Z140B

Z140B

Rectron USA

DIODE ZENER 140V 1W DO-41

0

MMSZ4695

MMSZ4695

Rectron USA

DIODE ZENER 8.7V 500MW SOD-123

0

BZM55C10BSB

BZM55C10BSB

Rectron USA

DIODE ZENER 10V 500MW LS-31

0

BZX84C9V1W

BZX84C9V1W

Rectron USA

DIODE ZENER 9.1V 200MW SOT-323

0

BZV55C 8.2BSC

BZV55C 8.2BSC

Rectron USA

DIODE ZENER 8.2V 500MW LL-34

0

BZX584C11

BZX584C11

Rectron USA

DIODE ZENER 11V 200MW SOD-523

0

SMB5362B

SMB5362B

Rectron USA

DIODE ZENER 28V 5W SMB

0

SMA3Z18A

SMA3Z18A

Rectron USA

DIODE ZENER 18V 3W SMA

0

SMA3Z68A

SMA3Z68A

Rectron USA

DIODE ZENER 68V 3W SMA

0

1SMB5940B

1SMB5940B

Rectron USA

DIODE ZENER 43V 3W SMB

0

1SMA5949B

1SMA5949B

Rectron USA

DIODE ZENER 100V 1.5W SMA

0

MMSZ4711

MMSZ4711

Rectron USA

DIODE ZENER 27V 500MW SOD-123

0

BZX884C16

BZX884C16

Rectron USA

DIODE ZENER 16V 250MW DN1006

0

BZX984C3V9

BZX984C3V9

Rectron USA

DIODE ZENER 3.9V 150MW SOD-923

0

1SMB5916B

1SMB5916B

Rectron USA

DIODE ZENER 4.3V 3W SMB

0

BZM55B15

BZM55B15

Rectron USA

ZENER 15V 500MW MICRO-MELF

0

BZD27C51P

BZD27C51P

Rectron USA

DIODE ZENER 51V 800MW SOD-123F

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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