Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
1SMAF2EZ91

1SMAF2EZ91

Rectron USA

DIODE ZENER 91V 2W SMAF

0

BZV55C 9.1BS

BZV55C 9.1BS

Rectron USA

DIODE ZENER 9.1V 500MW LL-34

0

MMBZ5246BW

MMBZ5246BW

Rectron USA

DIODE ZENER 16V 200MW SOT-323

0

BZT52C18S

BZT52C18S

Rectron USA

DIODE ZENER 18V 200MW SOD-323

0

MMBZ5232BW

MMBZ5232BW

Rectron USA

DIODE ZENER 5.6V 200MW SOT-323

0

BZV55C 11BSB

BZV55C 11BSB

Rectron USA

DIODE ZENER 11V 500MW LL-34

0

BZX984B10

BZX984B10

Rectron USA

DIODE ZENER 10V 150MW SOD-923

0

BZX584B68

BZX584B68

Rectron USA

DIODE ZENER 68V 200MW SOD-523

0

BZD27C4V3P

BZD27C4V3P

Rectron USA

DIODE ZENER 4.3V 800MW SOD-123F

0

SMF4745AV

SMF4745AV

Rectron USA

DIODE ZENER 16V 1W SOD-123FL

0

1SMAF4771A

1SMAF4771A

Rectron USA

DIODE ZENER 200V 1W SMAF

0

FM4747W

FM4747W

Rectron USA

DIODE ZENER GLASS 20V 1W SMA

0

BZM55C5.1BS

BZM55C5.1BS

Rectron USA

DIODE ZENER 5.1V 500MW LS-31

0

BZV55C 16BSA

BZV55C 16BSA

Rectron USA

DIODE ZENER 16V 500MW LL-34

0

BZX85C75-T-M

BZX85C75-T-M

Rectron USA

DIODE ZENER 75V 1.3W DO-41

0

BZV55C 5.6BS

BZV55C 5.6BS

Rectron USA

DIODE ZENER 5.6V 500MW LL-34

0

MM5Z2V0B

MM5Z2V0B

Rectron USA

DIODE ZENER 2V 500MW SOD-523

0

DL4758A

DL4758A

Rectron USA

DIODE ZENER 56V 1W LL-41

0

BZX984B30

BZX984B30

Rectron USA

DIODE ZENER 30V 150MW SOD-923

0

MMSZ5233BS

MMSZ5233BS

Rectron USA

DIODE ZENER 6V 500MW SOD-323

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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