Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
BZV55C 6.8BSA

BZV55C 6.8BSA

Rectron USA

DIODE ZENER 6.8V 500MW LL-34

0

MMSZ4700T

MMSZ4700T

Rectron USA

DIODE ZENER 13V 300MW SOD-523

0

DL4764A-B

DL4764A-B

Rectron USA

DIODE ZENER 100V 1W MELF

0

BZX584B4V3

BZX584B4V3

Rectron USA

DIODE ZENER 4.3V 200MW SOD-523

0

BZX85C5V6-T-M

BZX85C5V6-T-M

Rectron USA

DIODE ZENER 5.6V 1.3W DO-41

0

M3Z8V2B

M3Z8V2B

Rectron USA

DIODE ZENER 8.2V 200MW SOD-323F

0

BZX85C56-T-M

BZX85C56-T-M

Rectron USA

DIODE ZENER 56V 1.3W DO-41

0

SMA5933A

SMA5933A

Rectron USA

DIODE ZENER 22V 1W SMA

0

DL4744A

DL4744A

Rectron USA

DIODE ZENER 15V 1W LL-41

0

MMSZ4715

MMSZ4715

Rectron USA

DIODE ZENER 36V 500MW SOD-123

0

BZT52C11S

BZT52C11S

Rectron USA

DIODE ZENER 11V 200MW SOD-323

0

BZX85C62-T-M

BZX85C62-T-M

Rectron USA

DIODE ZENER 62V 1.3W DO-41

0

BZV55C 22BSB

BZV55C 22BSB

Rectron USA

DIODE ZENER 22V 500MW LL-34

0

BZX584B13

BZX584B13

Rectron USA

DIODE ZENER 13V 200MW SOD-523

0

SMB5351B

SMB5351B

Rectron USA

DIODE ZENER 14V 5W SMB

0

BZX984C36

BZX984C36

Rectron USA

DIODE ZENER 36V 150MW SOD-923

0

BZV55C 36BS

BZV55C 36BS

Rectron USA

DIODE ZENER 36V 500MW LL-34

0

MMSZ4696T

MMSZ4696T

Rectron USA

DIODE ZENER 9.1V 300MW SOD-523

0

ZMM5232B

ZMM5232B

Rectron USA

DIO ZENER GLASS 5.6V 500MW LL-34

0

Z160A

Z160A

Rectron USA

DIODE ZENER 160V 1W DO-41

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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