Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
MM5Z68B

MM5Z68B

Rectron USA

DIODE ZENER 68V 500MW SOD-523

0

1SMAF2EZ24

1SMAF2EZ24

Rectron USA

DIODE ZENER 24V 2W SMAF

0

BZM55B51

BZM55B51

Rectron USA

ZENER 51V 500MW MICRO-MELF

0

SMA5945A

SMA5945A

Rectron USA

DIODE ZENER 68V 1W SMA

0

MMBZ5259B

MMBZ5259B

Rectron USA

DIODE ZENER 39V 300MW SOT-23

0

BZT52C8V2S

BZT52C8V2S

Rectron USA

DIODE ZENER 8.2V 200MW SOD-323

0

SMB5370B

SMB5370B

Rectron USA

DIODE ZENER 56V 5W SMB

0

BZX85C110-T-M

BZX85C110-T-M

Rectron USA

DIODE ZENER 110V 1.3W DO-41

0

BZX84B30

BZX84B30

Rectron USA

DIODE ZENER 30V 350MW SOT-23

0

BZX884C5V1

BZX884C5V1

Rectron USA

DIODE ZENER 5.1V 250MW DN1006

0

MMBZ5258B

MMBZ5258B

Rectron USA

DIODE ZENER 36V 300MW SOT-23

0

BZD27C6V8P

BZD27C6V8P

Rectron USA

DIODE ZENER 6.8V 800MW SOD-123F

0

MMSZ4698T

MMSZ4698T

Rectron USA

DIODE ZENER 11V 300MW SOD-523

0

SMA3Z10A

SMA3Z10A

Rectron USA

DIODE ZENER 10V 3W SMA

0

BZX85C12-T-M

BZX85C12-T-M

Rectron USA

DIODE ZENER 12V 1.3W DO-41

0

Z220B

Z220B

Rectron USA

DIODE ZENER 220V 1W DO-41

0

FM4743W

FM4743W

Rectron USA

DIODE ZENER GLASS 13V 1W SMA

0

1SMAF4730A

1SMAF4730A

Rectron USA

DIODE ZENER 3.6V 1W SMAF

0

Z270B

Z270B

Rectron USA

DIODE ZENER 270V 1W DO-41

0

BZX984C11

BZX984C11

Rectron USA

DIODE ZENER 11V 150MW SOD-923

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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