Diodes - Zener - Arrays

Image Part Number Description / PDF Quantity Rfq
DZ5S100D0R

DZ5S100D0R

Panasonic

DIODE ZENER ARRAY 10V SSMINI5

7114

DZ3X068D0L

DZ3X068D0L

Panasonic

DIODE ZENER ARRAY 6.8V MINI3

3000

DZ4J130K0R

DZ4J130K0R

Panasonic

DIODE ZENER ARRAY 13V SMINI4

2410

MAZT062HGL

MAZT062HGL

Panasonic

DIODE ZENER ARRAY 6.2V SSMINI3

133

DZ4J270K0R

DZ4J270K0R

Panasonic

DIODE ZENER ARRAY 27V SMINI4

0

DZ4J024K0R

DZ4J024K0R

Panasonic

DIODE ZENER ARRAY 2.4V SMINI4

1085

DZ5S082D0R

DZ5S082D0R

Panasonic

DIODE ZENER ARRAY 8.2V SSMINI5

7836

DZ3S082D0L

DZ3S082D0L

Panasonic

DIODE ZENER ARRAY 8.2V SSMINI3

13837

DZ4J390K0R

DZ4J390K0R

Panasonic

DIODE ZENER ARRAY 39V SMINI4

0

DZ36082D0L

DZ36082D0L

Panasonic

DIODE ZENER ARRAY 8.2V ML3N4-B

0

DZ3S056D0L

DZ3S056D0L

Panasonic

DIODE ZENER ARRAY 5.6V SSMINI3

0

DZ4J220K0R

DZ4J220K0R

Panasonic

DIODE ZENER ARRAY 22V SMINI4

0

DZ4J120K0R

DZ4J120K0R

Panasonic

DIODE ZENER ARRAY 12V SMINI4

0

MAZW082HGL

MAZW082HGL

Panasonic

DIODE ZENER ARRAY 8.2V SSSMINI3

0

DZ3X062D0L

DZ3X062D0L

Panasonic

DIODE ZENER ARRAY 6.2V MINI3

1

DZ5X120D0R

DZ5X120D0R

Panasonic

DIODE ZENER ARRAY 12V MINI5

0

DZ4J033K0R

DZ4J033K0R

Panasonic

DIODE ZENER ARRAY 3.31V SMINI4

0

DZ3S120D0L

DZ3S120D0L

Panasonic

DIODE ZENER ARRAY 12V SSMINI3

0

MAZM068HGL

MAZM068HGL

Panasonic

DIODE ZENER ARRAY 6.8V SSMINI5

0

DZ37120D0L

DZ37120D0L

Panasonic

DIODE ZENER ARRAY 12V SSSMINI3

0

Diodes - Zener - Arrays

1. Overview

Zener diode arrays are discrete semiconductor devices integrating multiple Zener diodes in a single package. They leverage the Zener breakdown effect to provide precise voltage regulation, overvoltage protection, and reference voltage generation. These arrays are critical in modern electronics for ensuring circuit stability, protecting sensitive components from voltage spikes, and enabling compact PCB designs. Their importance spans industries like automotive, telecommunications, and industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional Zener ArraysSingle-direction voltage clampingESD protection in data lines
Bidirectional Zener ArraysDouble-sided voltage regulationAC voltage stabilization circuits
Multi-Voltage ArraysMultiple Zener diodes with different VzPower supply sequencing
Low-Leakage ArraysMinimized reverse leakage currentBattery-powered devices

3. Structure and Composition

Zener arrays consist of silicon semiconductor substrates with precisely doped P-N junctions. The die structure includes:

  • Doped regions creating tailored breakdown voltages
  • Metallic contacts for anode/cathode connections
  • Passivation layers preventing surface leakage
  • Thermal management structures (e.g., heat spreaders)
Common packaging types include SOIC, TSSOP, and DIP formats with standardized pinouts.

4. Key Technical Specifications

ParameterDescriptionTypical Range
Zener Voltage (Vz)Voltage regulation setpoint2.4V - 200V
Power Dissipation (Pd)Maximum thermal energy handling100mW - 5W
Zener Current (Iz)Operating current range1mA - 100mA
Dynamic Impedance (Zz)Voltage variation under load1 - 50
Temperature CoefficientVoltage stability vs temperature 0.05%/ C

5. Application Fields

Key industries utilizing Zener arrays include:

  • Telecommunications: Line protection for transceivers
  • Automotive: ECU voltage stabilization
  • Industrial Control: Sensor signal conditioning
  • Consumer Electronics: Power management circuits
Typical devices: SMPS converters, IoT sensors, motor controllers.

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
ON SemiconductorNUP41066-channel ESD protection array
STMicroelectronicsSMF48A48V bidirectional protection
NXP SemiconductorsPESD1CANAutomotive CAN bus protection
Texas InstrumentsZHCS100Ultra-low leakage voltage reference

7. Selection Guidelines

Key selection criteria:

  • Match Vz to target regulation voltage ( 5% tolerance)
  • Verify Pd rating exceeds maximum power dissipation
  • Consider package thermal resistance
  • Select appropriate leakage current level
  • For arrays: Ensure channel independence and crosstalk specifications
Application Case: In automotive ECU design, NXP PESD1CAN selected for its AEC-Q100 qualification and 40kV ESD robustness.

8. Industry Trends

Emerging trends include:

  • Miniaturization: 0.4mm pitch WLCSP packages
  • Integration with TVS diodes for hybrid protection
  • Wide bandgap materials (SiC) for higher Vz stability
  • Automotive-grade arrays supporting 48V systems
  • RoHS-compliant packaging materials
Market demand driven by 5G infrastructure and EV battery management systems.

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