Diodes - Zener - Arrays

Image Part Number Description / PDF Quantity Rfq
BZB984-C4V3,115

BZB984-C4V3,115

Nexperia

NOW NEXPERIA BZB984-C4V3 - ZENER

91440

S1ZMMBZ5245BLT1

S1ZMMBZ5245BLT1

DIODE ZENER 15V 225MW SOT23-3

54000

DZ23C4V7-HE3-18

DZ23C4V7-HE3-18

Vishay General Semiconductor – Diodes Division

DIODE ZENER 4.7V 300MW SOT23

0

BZB84-B68,215

BZB84-B68,215

Nexperia

NOW NEXPERIA BZB84-B68 - ZENER D

7500

DZ23C27-G3-08

DZ23C27-G3-08

Vishay General Semiconductor – Diodes Division

DIODE ZENER 27V 300MW SOT23

0

AZ23C36-TP

AZ23C36-TP

Micro Commercial Components (MCC)

DIODE ZENER ARRAY 36V SOT23

0

DZ23C3V9-7-F

DZ23C3V9-7-F

Zetex Semiconductors (Diodes Inc.)

DIODE ZENER ARRAY 3.9V SOT23-3

499239000

BZB984-C4V7,115

BZB984-C4V7,115

Nexperia

DIODE ZENER ARRAY 4.7V SOT663

5993

AZ23B3V9-G3-18

AZ23B3V9-G3-18

Vishay General Semiconductor – Diodes Division

DIODE ZENER 3.9V 300MW SOT23

0

AZ23B10-G3-08

AZ23B10-G3-08

Vishay General Semiconductor – Diodes Division

DIODE ZENER 10V 300MW SOT23

0

UMZ12NT106

UMZ12NT106

ROHM Semiconductor

DIODE ZENER ARRAY 12V 200MW UMD3

3769

AZ23C24-G3-08

AZ23C24-G3-08

Vishay General Semiconductor – Diodes Division

DIODE ZENER 24V 300MW SOT23

0

DZ23C18Q-7-F

DZ23C18Q-7-F

Zetex Semiconductors (Diodes Inc.)

ZENER DIODE SOT23

0

BZX84C5V6S-7-F

BZX84C5V6S-7-F

Zetex Semiconductors (Diodes Inc.)

DIODE ZENER ARRAY 5.6V SOT363

149000

BZB84-B13,215

BZB84-B13,215

Nexperia

DIODE ZENER ARRAY 13V SOT23

0

CMPZDA24V TR PBFREE

CMPZDA24V TR PBFREE

Central Semiconductor

DIODE ZENER ARRAY 24.2V SOT23

0

2BZX84C4V3

2BZX84C4V3

Diotec Semiconductor

ZENER SOT-23 4.3V 0.3W 5%

0

AZ23C3V9-HE3-08

AZ23C3V9-HE3-08

Vishay General Semiconductor – Diodes Division

DIODE ZENER 3.9V 300MW SOT23

0

UMZ18NT106

UMZ18NT106

ROHM Semiconductor

DIODE ZENER ARRAY 18V 200MW UMD3

4

DZ23C12Q-7-F

DZ23C12Q-7-F

Zetex Semiconductors (Diodes Inc.)

ZENER DIODE SOT23

0

Diodes - Zener - Arrays

1. Overview

Zener diode arrays are discrete semiconductor devices integrating multiple Zener diodes in a single package. They leverage the Zener breakdown effect to provide precise voltage regulation, overvoltage protection, and reference voltage generation. These arrays are critical in modern electronics for ensuring circuit stability, protecting sensitive components from voltage spikes, and enabling compact PCB designs. Their importance spans industries like automotive, telecommunications, and industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Unidirectional Zener ArraysSingle-direction voltage clampingESD protection in data lines
Bidirectional Zener ArraysDouble-sided voltage regulationAC voltage stabilization circuits
Multi-Voltage ArraysMultiple Zener diodes with different VzPower supply sequencing
Low-Leakage ArraysMinimized reverse leakage currentBattery-powered devices

3. Structure and Composition

Zener arrays consist of silicon semiconductor substrates with precisely doped P-N junctions. The die structure includes:

  • Doped regions creating tailored breakdown voltages
  • Metallic contacts for anode/cathode connections
  • Passivation layers preventing surface leakage
  • Thermal management structures (e.g., heat spreaders)
Common packaging types include SOIC, TSSOP, and DIP formats with standardized pinouts.

4. Key Technical Specifications

ParameterDescriptionTypical Range
Zener Voltage (Vz)Voltage regulation setpoint2.4V - 200V
Power Dissipation (Pd)Maximum thermal energy handling100mW - 5W
Zener Current (Iz)Operating current range1mA - 100mA
Dynamic Impedance (Zz)Voltage variation under load1 - 50
Temperature CoefficientVoltage stability vs temperature 0.05%/ C

5. Application Fields

Key industries utilizing Zener arrays include:

  • Telecommunications: Line protection for transceivers
  • Automotive: ECU voltage stabilization
  • Industrial Control: Sensor signal conditioning
  • Consumer Electronics: Power management circuits
Typical devices: SMPS converters, IoT sensors, motor controllers.

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
ON SemiconductorNUP41066-channel ESD protection array
STMicroelectronicsSMF48A48V bidirectional protection
NXP SemiconductorsPESD1CANAutomotive CAN bus protection
Texas InstrumentsZHCS100Ultra-low leakage voltage reference

7. Selection Guidelines

Key selection criteria:

  • Match Vz to target regulation voltage ( 5% tolerance)
  • Verify Pd rating exceeds maximum power dissipation
  • Consider package thermal resistance
  • Select appropriate leakage current level
  • For arrays: Ensure channel independence and crosstalk specifications
Application Case: In automotive ECU design, NXP PESD1CAN selected for its AEC-Q100 qualification and 40kV ESD robustness.

8. Industry Trends

Emerging trends include:

  • Miniaturization: 0.4mm pitch WLCSP packages
  • Integration with TVS diodes for hybrid protection
  • Wide bandgap materials (SiC) for higher Vz stability
  • Automotive-grade arrays supporting 48V systems
  • RoHS-compliant packaging materials
Market demand driven by 5G infrastructure and EV battery management systems.

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