Diodes - Variable Capacitance (Varicaps, Varactors)

Image Part Number Description / PDF Quantity Rfq
BB914

BB914

IR (Infineon Technologies)

BB914 - VARACTOR DIODE

66000

BB565H7912XTSA1

BB565H7912XTSA1

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

0

BBY5503WE6327HTSA1

BBY5503WE6327HTSA1

IR (Infineon Technologies)

BBY55 - VARACTOR DIODE

288770

BB69C-02V

BB69C-02V

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

0

BB85702VH7902XTSA1

BB85702VH7902XTSA1

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

0

BB640

BB640

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

11872

BB565H7908

BB565H7908

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

27000

BB535E7904

BB535E7904

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

286818

BB640E7907

BB640E7907

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

7944

BB844E6327HTSA1

BB844E6327HTSA1

IR (Infineon Technologies)

DIODE VARACTOR 18V DUAL SOT23-3

10483

BB66402VE7902

BB66402VE7902

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

8000

BB439E6327HTSA1

BB439E6327HTSA1

IR (Infineon Technologies)

DIODE RF SGL 28V 20MA SOD323-2

6300

BBY5305WE6327

BBY5305WE6327

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

6719

BBY57-02V

BBY57-02V

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

36027

BB831E7904

BB831E7904

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

1399

BB 565 H7908

BB 565 H7908

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

42000

BBY5702VH6327XTSA1

BBY5702VH6327XTSA1

IR (Infineon Technologies)

DIODE TUNING 10V 20MA SC79

116071

BBY53-03WE6327

BBY53-03WE6327

IR (Infineon Technologies)

BBY53 - VARACTOR DIODE

2450

BBY51-03W

BBY51-03W

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

3000

BBY5603WE6327HTSA1

BBY5603WE6327HTSA1

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

179663

Diodes - Variable Capacitance (Varicaps, Varactors)

1. Overview

Variable Capacitance Diodes (Varicaps or Varactors) are specialized semiconductor devices that exploit the voltage-dependent capacitance of a reverse-biased p-n junction. These components act as voltage-controlled capacitors, enabling electronic tuning and frequency modulation in various circuits. Their ability to provide precise capacitance adjustment without mechanical movement makes them critical in modern communication systems, signal processing, and RF/wireless applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Hyperabrupt VaractorsNon-linear C-V curve with high capacitance ratioVoltage-Controlled Oscillators (VCOs), Frequency Synthesizers
Abrupt Junction VaractorsLinear C-V characteristicsParametric Amplifiers, Tunable Filters
Double VaractorsDual back-to-back junctions for balanced operationModulators, Demodulators, Microwave Switches
High-Voltage VaractorsRated for >100V reverse biasPower Tuning Circuits, Industrial RF Equipment

3. Structure and Composition

Varactors are constructed with a p-n junction optimized for controlled depletion region expansion. Key structural elements include:

  • Doped semiconductor layers (typically silicon or GaAs)
  • Metallized contacts with passivation layers
  • Hermetic glass or plastic encapsulation
  • Specific junction geometry to define capacitance-voltage (C-V) characteristics

The depletion region width varies with reverse bias voltage, altering the effective capacitance according to the formula: C = A/(W+d), where W is depletion width and d is fixed dielectric thickness.

4. Key Technical Specifications

ParameterSignificance
Capacitance Range (Cmin-Cmax)Determines tuning range at specific bias voltages
Q-Factor (Quality Factor)Measures energy loss at operating frequencies
Breakdown Voltage (Vbr)Maximum allowable reverse voltage
Series Resistance (Rs)Affects power handling capability
Temperature CoefficientDefines capacitance stability over temperature
Capacitance Ratio (Cmax/Cmin)Indicates tuning efficiency

5. Application Fields

Major application areas include:

  • Telecommunications: Cellular base stations, Satellite receivers, Wi-Fi equipment
  • Consumer Electronics: Smartphones, Television tuners, Bluetooth devices
  • Industrial: Test and measurement equipment, RFID systems
  • Automotive: Keyless entry systems, Radar sensors
  • Specialized: Phase-locked loops (PLLs), Parametric amplifiers

Case Study: In a smartphone transceiver, varactors enable adaptive antenna tuning to maintain optimal signal strength across multiple frequency bands (700MHz-6GHz).

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
ON SemiconductorMVAM SeriesHigh Q (>1000), 12pF-50pF range
STMicroelectronicsBB8XX SeriesUltra-small SMD packaging, 1-30pF
Skyworks SolutionsSMV SeriesHigh linearity for CATV applications
NXP SemiconductorsBBY SeriesAutomotive-grade temperature stability

7. Selection Guidelines

Key selection criteria:

  • Match capacitance range to required frequency tuning range
  • Select appropriate Q-factor for target frequency (higher Q for microwave applications)
  • Consider temperature stability requirements
  • Evaluate package type (SMD vs. through-hole) for PCB integration
  • Verify voltage ratings against circuit requirements
  • Assess non-linearity requirements for modulation applications

For high-reliability applications, prioritize devices with AEC-Q101 automotive qualification.

8. Industry Trends

Current development trends include:

  • Increased integration with MEMS technology for hybrid tuning solutions
  • Development of GaN-based varactors for millimeter-wave applications
  • Improved capacitance ratios through advanced junction engineering
  • Nanometer-scale dielectrics for ultra-low voltage operation
  • Embedded varactors in SiP (System-in-Package) modules

The market is projected to grow at 6.2% CAGR through 2027, driven by 5G infrastructure and IoT connectivity demands.

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