Diodes - Variable Capacitance (Varicaps, Varactors)

Image Part Number Description / PDF Quantity Rfq
BB171X

BB171X

NXP Semiconductors

BB171 - VHF VARIABLE CAPACITANCE

16888

BB174X

BB174X

NXP Semiconductors

DIODE VHF VAR CAP 30V SOD523

14722

BB149A,115

BB149A,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

0

BB207,235

BB207,235

NXP Semiconductors

DIODE FM VAR CAP DUAL SOT23

0

BBY40,235

BBY40,235

NXP Semiconductors

DIODE VHF VAR CAP 30V SOT23

8699

BB189315

BB189315

NXP Semiconductors

DIODE UHF VAR CAP 32V SOD523

192000

BA591/A115

BA591/A115

NXP Semiconductors

MIXER DIODE, VERY HIGH FREQUENCY

6000

BB178/L315

BB178/L315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE, VERY

4200668

BB182,335

BB182,335

NXP Semiconductors

DIODE VHF VAR CAP 32V SOD523

0

BB153,115

BB153,115

NXP Semiconductors

DIODE VHF VAR CAP 32V SOD324

0

BB179LX,315

BB179LX,315

NXP Semiconductors

DIODE UHF VAR CAP 30V SOD882T

0

BBY31,215

BBY31,215

NXP Semiconductors

DIODE UHF VAR CAP 30V SOT-23

0

BB143,115

BB143,115

NXP Semiconductors

DIODE VAR CAP 6V SOD-523

0

BB179,135

BB179,135

NXP Semiconductors

DIODE UHF VAR CAP 30V SOD523

0

BB178,135

BB178,135

NXP Semiconductors

DIODE VHF VAR CAP 32V SOD523

0

BB179B,135

BB179B,135

NXP Semiconductors

DIODE UHF VAR CAP 32V SOD523

0

BB179B,335

BB179B,335

NXP Semiconductors

DIODE UHF VAR CAP 32V SOD523

0

BB145,115

BB145,115

NXP Semiconductors

DIODE VAR CAP 6V SOD-523

0

BB187LX,315

BB187LX,315

NXP Semiconductors

DIODE VHF VAR CAP 32V SOD882

0

BB153,135

BB153,135

NXP Semiconductors

DIODE VHF VAR CAP 32V SOD323

0

Diodes - Variable Capacitance (Varicaps, Varactors)

1. Overview

Variable Capacitance Diodes (Varicaps or Varactors) are specialized semiconductor devices that exploit the voltage-dependent capacitance of a reverse-biased p-n junction. These components act as voltage-controlled capacitors, enabling electronic tuning and frequency modulation in various circuits. Their ability to provide precise capacitance adjustment without mechanical movement makes them critical in modern communication systems, signal processing, and RF/wireless applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Hyperabrupt VaractorsNon-linear C-V curve with high capacitance ratioVoltage-Controlled Oscillators (VCOs), Frequency Synthesizers
Abrupt Junction VaractorsLinear C-V characteristicsParametric Amplifiers, Tunable Filters
Double VaractorsDual back-to-back junctions for balanced operationModulators, Demodulators, Microwave Switches
High-Voltage VaractorsRated for >100V reverse biasPower Tuning Circuits, Industrial RF Equipment

3. Structure and Composition

Varactors are constructed with a p-n junction optimized for controlled depletion region expansion. Key structural elements include:

  • Doped semiconductor layers (typically silicon or GaAs)
  • Metallized contacts with passivation layers
  • Hermetic glass or plastic encapsulation
  • Specific junction geometry to define capacitance-voltage (C-V) characteristics

The depletion region width varies with reverse bias voltage, altering the effective capacitance according to the formula: C = A/(W+d), where W is depletion width and d is fixed dielectric thickness.

4. Key Technical Specifications

ParameterSignificance
Capacitance Range (Cmin-Cmax)Determines tuning range at specific bias voltages
Q-Factor (Quality Factor)Measures energy loss at operating frequencies
Breakdown Voltage (Vbr)Maximum allowable reverse voltage
Series Resistance (Rs)Affects power handling capability
Temperature CoefficientDefines capacitance stability over temperature
Capacitance Ratio (Cmax/Cmin)Indicates tuning efficiency

5. Application Fields

Major application areas include:

  • Telecommunications: Cellular base stations, Satellite receivers, Wi-Fi equipment
  • Consumer Electronics: Smartphones, Television tuners, Bluetooth devices
  • Industrial: Test and measurement equipment, RFID systems
  • Automotive: Keyless entry systems, Radar sensors
  • Specialized: Phase-locked loops (PLLs), Parametric amplifiers

Case Study: In a smartphone transceiver, varactors enable adaptive antenna tuning to maintain optimal signal strength across multiple frequency bands (700MHz-6GHz).

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
ON SemiconductorMVAM SeriesHigh Q (>1000), 12pF-50pF range
STMicroelectronicsBB8XX SeriesUltra-small SMD packaging, 1-30pF
Skyworks SolutionsSMV SeriesHigh linearity for CATV applications
NXP SemiconductorsBBY SeriesAutomotive-grade temperature stability

7. Selection Guidelines

Key selection criteria:

  • Match capacitance range to required frequency tuning range
  • Select appropriate Q-factor for target frequency (higher Q for microwave applications)
  • Consider temperature stability requirements
  • Evaluate package type (SMD vs. through-hole) for PCB integration
  • Verify voltage ratings against circuit requirements
  • Assess non-linearity requirements for modulation applications

For high-reliability applications, prioritize devices with AEC-Q101 automotive qualification.

8. Industry Trends

Current development trends include:

  • Increased integration with MEMS technology for hybrid tuning solutions
  • Development of GaN-based varactors for millimeter-wave applications
  • Improved capacitance ratios through advanced junction engineering
  • Nanometer-scale dielectrics for ultra-low voltage operation
  • Embedded varactors in SiP (System-in-Package) modules

The market is projected to grow at 6.2% CAGR through 2027, driven by 5G infrastructure and IoT connectivity demands.

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