Diodes - Variable Capacitance (Varicaps, Varactors)

Image Part Number Description / PDF Quantity Rfq
HVC369BTRF-E

HVC369BTRF-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

28000

HVC355BTRF

HVC355BTRF

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

42000

HVU316TRU-E

HVU316TRU-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

18000

HVC316TRU-E

HVC316TRU-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

87900

HVU363ATRU-E

HVU363ATRU-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

48000

HVU359TRF-E

HVU359TRF-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

138200

HVU202ATRU-E

HVU202ATRU-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

122850

HVU202BTRU-E

HVU202BTRU-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

189000

RKV606KL#R1

RKV606KL#R1

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

158749

HVU306A5TLF-E

HVU306A5TLF-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

63000

HVC300C1TRU-E

HVC300C1TRU-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

65499

HVU350BTRF-E

HVU350BTRF-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

14096

RKV607KM#R1

RKV607KM#R1

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

10000

HVU300C4TRF-E

HVU300C4TRF-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

67500

HVC200A3TRF

HVC200A3TRF

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

40000

RKV502KK-N#R1

RKV502KK-N#R1

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

64000

HVC308ATRF-E

HVC308ATRF-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

15403

HVC383BTRF-E

HVC383BTRF-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

42765

HVC381BTRF-E

HVC381BTRF-E

Renesas Electronics America

DIODE VAR CAP SINGLE 15V

72000

RKV501KJ#P1

RKV501KJ#P1

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

68000

Diodes - Variable Capacitance (Varicaps, Varactors)

1. Overview

Variable Capacitance Diodes (Varicaps or Varactors) are specialized semiconductor devices that exploit the voltage-dependent capacitance of a reverse-biased p-n junction. These components act as voltage-controlled capacitors, enabling electronic tuning and frequency modulation in various circuits. Their ability to provide precise capacitance adjustment without mechanical movement makes them critical in modern communication systems, signal processing, and RF/wireless applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Hyperabrupt VaractorsNon-linear C-V curve with high capacitance ratioVoltage-Controlled Oscillators (VCOs), Frequency Synthesizers
Abrupt Junction VaractorsLinear C-V characteristicsParametric Amplifiers, Tunable Filters
Double VaractorsDual back-to-back junctions for balanced operationModulators, Demodulators, Microwave Switches
High-Voltage VaractorsRated for >100V reverse biasPower Tuning Circuits, Industrial RF Equipment

3. Structure and Composition

Varactors are constructed with a p-n junction optimized for controlled depletion region expansion. Key structural elements include:

  • Doped semiconductor layers (typically silicon or GaAs)
  • Metallized contacts with passivation layers
  • Hermetic glass or plastic encapsulation
  • Specific junction geometry to define capacitance-voltage (C-V) characteristics

The depletion region width varies with reverse bias voltage, altering the effective capacitance according to the formula: C = A/(W+d), where W is depletion width and d is fixed dielectric thickness.

4. Key Technical Specifications

ParameterSignificance
Capacitance Range (Cmin-Cmax)Determines tuning range at specific bias voltages
Q-Factor (Quality Factor)Measures energy loss at operating frequencies
Breakdown Voltage (Vbr)Maximum allowable reverse voltage
Series Resistance (Rs)Affects power handling capability
Temperature CoefficientDefines capacitance stability over temperature
Capacitance Ratio (Cmax/Cmin)Indicates tuning efficiency

5. Application Fields

Major application areas include:

  • Telecommunications: Cellular base stations, Satellite receivers, Wi-Fi equipment
  • Consumer Electronics: Smartphones, Television tuners, Bluetooth devices
  • Industrial: Test and measurement equipment, RFID systems
  • Automotive: Keyless entry systems, Radar sensors
  • Specialized: Phase-locked loops (PLLs), Parametric amplifiers

Case Study: In a smartphone transceiver, varactors enable adaptive antenna tuning to maintain optimal signal strength across multiple frequency bands (700MHz-6GHz).

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
ON SemiconductorMVAM SeriesHigh Q (>1000), 12pF-50pF range
STMicroelectronicsBB8XX SeriesUltra-small SMD packaging, 1-30pF
Skyworks SolutionsSMV SeriesHigh linearity for CATV applications
NXP SemiconductorsBBY SeriesAutomotive-grade temperature stability

7. Selection Guidelines

Key selection criteria:

  • Match capacitance range to required frequency tuning range
  • Select appropriate Q-factor for target frequency (higher Q for microwave applications)
  • Consider temperature stability requirements
  • Evaluate package type (SMD vs. through-hole) for PCB integration
  • Verify voltage ratings against circuit requirements
  • Assess non-linearity requirements for modulation applications

For high-reliability applications, prioritize devices with AEC-Q101 automotive qualification.

8. Industry Trends

Current development trends include:

  • Increased integration with MEMS technology for hybrid tuning solutions
  • Development of GaN-based varactors for millimeter-wave applications
  • Improved capacitance ratios through advanced junction engineering
  • Nanometer-scale dielectrics for ultra-low voltage operation
  • Embedded varactors in SiP (System-in-Package) modules

The market is projected to grow at 6.2% CAGR through 2027, driven by 5G infrastructure and IoT connectivity demands.

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