Diodes - Variable Capacitance (Varicaps, Varactors)

Image Part Number Description / PDF Quantity Rfq
BB565H7902XTSA1

BB565H7902XTSA1

IR (Infineon Technologies)

DIODE VAR CAP 30V 20MA SCD80

0

BB198,115

BB198,115

NXP Semiconductors

DIODE RF LV VARI CAP SOD-523

0

BB 565 E7908

BB 565 E7908

IR (Infineon Technologies)

DIODE VAR CAP 30V 20MA SCD-80

0

ZMV932TC

ZMV932TC

Zetex Semiconductors (Diodes Inc.)

DIODE VARACTOR 12V SOD323

0

ZMV835BTA

ZMV835BTA

Zetex Semiconductors (Diodes Inc.)

DIODE VARACTOR 25V SOD323

0

ZC836BTC

ZC836BTC

Zetex Semiconductors (Diodes Inc.)

DIODE VAR CAPACITANCE SOT23-3

0

SMV1265-011LF

SMV1265-011LF

Skyworks Solutions, Inc.

DIODE VARACTOR 30V 20MA SOD323

0

BB 659C-02V E7902

BB 659C-02V E7902

IR (Infineon Technologies)

DIODE VAR CAP 30V 20MA SC-79

0

MA26V0900A

MA26V0900A

Panasonic

DIODE VARIABLE CAP 6V 1006

0

BBY6605WH6327XTSA1

BBY6605WH6327XTSA1

IR (Infineon Technologies)

DIODE TUNING 12V 50MA SOT323

0

ZV933V2TA

ZV933V2TA

Zetex Semiconductors (Diodes Inc.)

DIODE VARACTOR 12V 150Q SOD-523

0

BB149A,135

BB149A,135

NXP Semiconductors

DIODE UHF VAR CAP 30V SOD323

0

SMV1145-079LF

SMV1145-079LF

Skyworks Solutions, Inc.

DIODE VARACTOR

102000

ZC933ATA

ZC933ATA

Zetex Semiconductors (Diodes Inc.)

DIODE VAR CAP 42PF 1A SOT23-3

0

BB55502VH7912XTSA1

BB55502VH7912XTSA1

IR (Infineon Technologies)

DIODE VAR CAP 30V 20MA SC79

0

BBY 57-02L E6327

BBY 57-02L E6327

IR (Infineon Technologies)

DIODE TUNING 10V 20MA TSLP-2

0

MA27V1100L

MA27V1100L

Panasonic

DIODE VARIABLE CAP 8V SSS-MINI

0

SVC383T-TL-E

SVC383T-TL-E

Sanyo Semiconductor/ON Semiconductor

DIODE VARACTOR 33V CPH3

0

BBY 56-02W E6127

BBY 56-02W E6127

IR (Infineon Technologies)

DIODE TUNING 10V 20MA SCD-80

0

BB 659C E7902

BB 659C E7902

IR (Infineon Technologies)

DIODE VAR CAP 30V 20MA SCD-80

0

Diodes - Variable Capacitance (Varicaps, Varactors)

1. Overview

Variable Capacitance Diodes (Varicaps or Varactors) are specialized semiconductor devices that exploit the voltage-dependent capacitance of a reverse-biased p-n junction. These components act as voltage-controlled capacitors, enabling electronic tuning and frequency modulation in various circuits. Their ability to provide precise capacitance adjustment without mechanical movement makes them critical in modern communication systems, signal processing, and RF/wireless applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Hyperabrupt VaractorsNon-linear C-V curve with high capacitance ratioVoltage-Controlled Oscillators (VCOs), Frequency Synthesizers
Abrupt Junction VaractorsLinear C-V characteristicsParametric Amplifiers, Tunable Filters
Double VaractorsDual back-to-back junctions for balanced operationModulators, Demodulators, Microwave Switches
High-Voltage VaractorsRated for >100V reverse biasPower Tuning Circuits, Industrial RF Equipment

3. Structure and Composition

Varactors are constructed with a p-n junction optimized for controlled depletion region expansion. Key structural elements include:

  • Doped semiconductor layers (typically silicon or GaAs)
  • Metallized contacts with passivation layers
  • Hermetic glass or plastic encapsulation
  • Specific junction geometry to define capacitance-voltage (C-V) characteristics

The depletion region width varies with reverse bias voltage, altering the effective capacitance according to the formula: C = A/(W+d), where W is depletion width and d is fixed dielectric thickness.

4. Key Technical Specifications

ParameterSignificance
Capacitance Range (Cmin-Cmax)Determines tuning range at specific bias voltages
Q-Factor (Quality Factor)Measures energy loss at operating frequencies
Breakdown Voltage (Vbr)Maximum allowable reverse voltage
Series Resistance (Rs)Affects power handling capability
Temperature CoefficientDefines capacitance stability over temperature
Capacitance Ratio (Cmax/Cmin)Indicates tuning efficiency

5. Application Fields

Major application areas include:

  • Telecommunications: Cellular base stations, Satellite receivers, Wi-Fi equipment
  • Consumer Electronics: Smartphones, Television tuners, Bluetooth devices
  • Industrial: Test and measurement equipment, RFID systems
  • Automotive: Keyless entry systems, Radar sensors
  • Specialized: Phase-locked loops (PLLs), Parametric amplifiers

Case Study: In a smartphone transceiver, varactors enable adaptive antenna tuning to maintain optimal signal strength across multiple frequency bands (700MHz-6GHz).

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
ON SemiconductorMVAM SeriesHigh Q (>1000), 12pF-50pF range
STMicroelectronicsBB8XX SeriesUltra-small SMD packaging, 1-30pF
Skyworks SolutionsSMV SeriesHigh linearity for CATV applications
NXP SemiconductorsBBY SeriesAutomotive-grade temperature stability

7. Selection Guidelines

Key selection criteria:

  • Match capacitance range to required frequency tuning range
  • Select appropriate Q-factor for target frequency (higher Q for microwave applications)
  • Consider temperature stability requirements
  • Evaluate package type (SMD vs. through-hole) for PCB integration
  • Verify voltage ratings against circuit requirements
  • Assess non-linearity requirements for modulation applications

For high-reliability applications, prioritize devices with AEC-Q101 automotive qualification.

8. Industry Trends

Current development trends include:

  • Increased integration with MEMS technology for hybrid tuning solutions
  • Development of GaN-based varactors for millimeter-wave applications
  • Improved capacitance ratios through advanced junction engineering
  • Nanometer-scale dielectrics for ultra-low voltage operation
  • Embedded varactors in SiP (System-in-Package) modules

The market is projected to grow at 6.2% CAGR through 2027, driven by 5G infrastructure and IoT connectivity demands.

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