Diodes - Variable Capacitance (Varicaps, Varactors)

Image Part Number Description / PDF Quantity Rfq
BB179,115

BB179,115

NXP Semiconductors

DIODE UHF VAR CAP 30V SOD523

0

MA27V0700L

MA27V0700L

Panasonic

DIODE VARIABLE CAP 6V SSS-MINI

0

BBY5705WE6327HTSA1

BBY5705WE6327HTSA1

IR (Infineon Technologies)

DIODE TUNING HIGH Q CC SOT-323

0

BBY 57-02V E6327

BBY 57-02V E6327

IR (Infineon Technologies)

VARACTOR DIODE 17.5PF 10V 20MA

0

ZMV829BTA

ZMV829BTA

Zetex Semiconductors (Diodes Inc.)

DIODE VAR CAP 8.2PF 25V SOD-323

0

BBY6605WE6327HTSA1

BBY6605WE6327HTSA1

IR (Infineon Technologies)

DIODE TUNING HIGH Q CC SOT-323

0

BBY5806WE6327BTSA1

BBY5806WE6327BTSA1

IR (Infineon Technologies)

DIODE TUNING HIGH Q CA SOT-323

0

BB178LX,315

BB178LX,315

NXP Semiconductors

DIODE UHF VAR CAP 32V SOD882T

0

BB 659C-02V E7912

BB 659C-02V E7912

IR (Infineon Technologies)

DIODE VARIABLE 30V 20MA SC-79

0

SMV1235-001

SMV1235-001

Skyworks Solutions, Inc.

DIODE VARACTOR 15V 20MA SOT-23

0

BB 555 E7912

BB 555 E7912

IR (Infineon Technologies)

DIODE TUNING 30V 20MA SCD-80

0

BB 659 E7902

BB 659 E7902

IR (Infineon Technologies)

DIODE VAR CAP 30V 20MA SCD-80

0

BB 689 E7903

BB 689 E7903

IR (Infineon Technologies)

DIODE TUNING 30V 20MA SCD-80

0

BBY 51-02L E6327

BBY 51-02L E6327

IR (Infineon Technologies)

DIODE TUNING 7V 20MA TSLP-2

0

BB189,315

BB189,315

NXP Semiconductors

DIODE UHF VAR CAP 32V SOD523

0

MA2S35700L

MA2S35700L

Panasonic

DIODE VARIABLE CAP 34V SS-MINI

0

BBY 56-02W E6327

BBY 56-02W E6327

IR (Infineon Technologies)

DIODE TUNING 10V 20MA SCD-80

0

MA2SV0500L

MA2SV0500L

Panasonic

DIODE VARIABLE CAP 6V SSMINI-2P

0

MMBV109LT1G

MMBV109LT1G

Sanyo Semiconductor/ON Semiconductor

DIODE TUNING SS 30V SOT23

0

ZC829BTC

ZC829BTC

Zetex Semiconductors (Diodes Inc.)

DIODE VAR CAPACITANCE SOT23-3

0

Diodes - Variable Capacitance (Varicaps, Varactors)

1. Overview

Variable Capacitance Diodes (Varicaps or Varactors) are specialized semiconductor devices that exploit the voltage-dependent capacitance of a reverse-biased p-n junction. These components act as voltage-controlled capacitors, enabling electronic tuning and frequency modulation in various circuits. Their ability to provide precise capacitance adjustment without mechanical movement makes them critical in modern communication systems, signal processing, and RF/wireless applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Hyperabrupt VaractorsNon-linear C-V curve with high capacitance ratioVoltage-Controlled Oscillators (VCOs), Frequency Synthesizers
Abrupt Junction VaractorsLinear C-V characteristicsParametric Amplifiers, Tunable Filters
Double VaractorsDual back-to-back junctions for balanced operationModulators, Demodulators, Microwave Switches
High-Voltage VaractorsRated for >100V reverse biasPower Tuning Circuits, Industrial RF Equipment

3. Structure and Composition

Varactors are constructed with a p-n junction optimized for controlled depletion region expansion. Key structural elements include:

  • Doped semiconductor layers (typically silicon or GaAs)
  • Metallized contacts with passivation layers
  • Hermetic glass or plastic encapsulation
  • Specific junction geometry to define capacitance-voltage (C-V) characteristics

The depletion region width varies with reverse bias voltage, altering the effective capacitance according to the formula: C = A/(W+d), where W is depletion width and d is fixed dielectric thickness.

4. Key Technical Specifications

ParameterSignificance
Capacitance Range (Cmin-Cmax)Determines tuning range at specific bias voltages
Q-Factor (Quality Factor)Measures energy loss at operating frequencies
Breakdown Voltage (Vbr)Maximum allowable reverse voltage
Series Resistance (Rs)Affects power handling capability
Temperature CoefficientDefines capacitance stability over temperature
Capacitance Ratio (Cmax/Cmin)Indicates tuning efficiency

5. Application Fields

Major application areas include:

  • Telecommunications: Cellular base stations, Satellite receivers, Wi-Fi equipment
  • Consumer Electronics: Smartphones, Television tuners, Bluetooth devices
  • Industrial: Test and measurement equipment, RFID systems
  • Automotive: Keyless entry systems, Radar sensors
  • Specialized: Phase-locked loops (PLLs), Parametric amplifiers

Case Study: In a smartphone transceiver, varactors enable adaptive antenna tuning to maintain optimal signal strength across multiple frequency bands (700MHz-6GHz).

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
ON SemiconductorMVAM SeriesHigh Q (>1000), 12pF-50pF range
STMicroelectronicsBB8XX SeriesUltra-small SMD packaging, 1-30pF
Skyworks SolutionsSMV SeriesHigh linearity for CATV applications
NXP SemiconductorsBBY SeriesAutomotive-grade temperature stability

7. Selection Guidelines

Key selection criteria:

  • Match capacitance range to required frequency tuning range
  • Select appropriate Q-factor for target frequency (higher Q for microwave applications)
  • Consider temperature stability requirements
  • Evaluate package type (SMD vs. through-hole) for PCB integration
  • Verify voltage ratings against circuit requirements
  • Assess non-linearity requirements for modulation applications

For high-reliability applications, prioritize devices with AEC-Q101 automotive qualification.

8. Industry Trends

Current development trends include:

  • Increased integration with MEMS technology for hybrid tuning solutions
  • Development of GaN-based varactors for millimeter-wave applications
  • Improved capacitance ratios through advanced junction engineering
  • Nanometer-scale dielectrics for ultra-low voltage operation
  • Embedded varactors in SiP (System-in-Package) modules

The market is projected to grow at 6.2% CAGR through 2027, driven by 5G infrastructure and IoT connectivity demands.

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