Diodes - Variable Capacitance (Varicaps, Varactors)

Image Part Number Description / PDF Quantity Rfq
HVD385BKRF-E

HVD385BKRF-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

103000

SVC251SPA

SVC251SPA

VARIABLE CAPACITANCE DIODE

31440

RKV501KJ#R1

RKV501KJ#R1

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

24000

MAVR-000120-12030P

MAVR-000120-12030P

Metelics (MACOM Technology Solutions)

VARACTOR, GAAS FLIP-CHIP, POCKET

275015000

HVD326CKRU-E

HVD326CKRU-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

136000

MA46477-134

MA46477-134

Metelics (MACOM Technology Solutions)

DIODE,VARACTOR,GAAS,CHIP

200

HVC328CTRU-E

HVC328CTRU-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

127375

HVU358-2TRF-E

HVU358-2TRF-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

90000

HVD328CKRU-E

HVD328CKRU-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

136000

HVU359-9TRF-E

HVU359-9TRF-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

1000

SKY12349-362LF

SKY12349-362LF

Skyworks Solutions, Inc.

IC RF ATTENUATOR DGTL 24VFQFN

45000

HVU350-3BTRF-E

HVU350-3BTRF-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

57000

HVD368BKRF-E

HVD368BKRF-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

24000

HVU306CTRU-E

HVU306CTRU-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

93000

HVL358C1KRF-E

HVL358C1KRF-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

1440000

SVC386T-AL

SVC386T-AL

SILICON DIFFUSED JUNCTION TYPE C

280800

SVC371R-TL-E

SVC371R-TL-E

AM VARICAP 6 IN 1 VR 8V

7000

MA46474-95

MA46474-95

Metelics (MACOM Technology Solutions)

DIODE,GAASVARACTOR,1.25GAMMA

50

RKV604KP-2#R0

RKV604KP-2#R0

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

30000

HVC200ATRU-E

HVC200ATRU-E

Renesas Electronics America

VARIABLE CAPACITANCE DIODE

64000

Diodes - Variable Capacitance (Varicaps, Varactors)

1. Overview

Variable Capacitance Diodes (Varicaps or Varactors) are specialized semiconductor devices that exploit the voltage-dependent capacitance of a reverse-biased p-n junction. These components act as voltage-controlled capacitors, enabling electronic tuning and frequency modulation in various circuits. Their ability to provide precise capacitance adjustment without mechanical movement makes them critical in modern communication systems, signal processing, and RF/wireless applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Hyperabrupt VaractorsNon-linear C-V curve with high capacitance ratioVoltage-Controlled Oscillators (VCOs), Frequency Synthesizers
Abrupt Junction VaractorsLinear C-V characteristicsParametric Amplifiers, Tunable Filters
Double VaractorsDual back-to-back junctions for balanced operationModulators, Demodulators, Microwave Switches
High-Voltage VaractorsRated for >100V reverse biasPower Tuning Circuits, Industrial RF Equipment

3. Structure and Composition

Varactors are constructed with a p-n junction optimized for controlled depletion region expansion. Key structural elements include:

  • Doped semiconductor layers (typically silicon or GaAs)
  • Metallized contacts with passivation layers
  • Hermetic glass or plastic encapsulation
  • Specific junction geometry to define capacitance-voltage (C-V) characteristics

The depletion region width varies with reverse bias voltage, altering the effective capacitance according to the formula: C = A/(W+d), where W is depletion width and d is fixed dielectric thickness.

4. Key Technical Specifications

ParameterSignificance
Capacitance Range (Cmin-Cmax)Determines tuning range at specific bias voltages
Q-Factor (Quality Factor)Measures energy loss at operating frequencies
Breakdown Voltage (Vbr)Maximum allowable reverse voltage
Series Resistance (Rs)Affects power handling capability
Temperature CoefficientDefines capacitance stability over temperature
Capacitance Ratio (Cmax/Cmin)Indicates tuning efficiency

5. Application Fields

Major application areas include:

  • Telecommunications: Cellular base stations, Satellite receivers, Wi-Fi equipment
  • Consumer Electronics: Smartphones, Television tuners, Bluetooth devices
  • Industrial: Test and measurement equipment, RFID systems
  • Automotive: Keyless entry systems, Radar sensors
  • Specialized: Phase-locked loops (PLLs), Parametric amplifiers

Case Study: In a smartphone transceiver, varactors enable adaptive antenna tuning to maintain optimal signal strength across multiple frequency bands (700MHz-6GHz).

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
ON SemiconductorMVAM SeriesHigh Q (>1000), 12pF-50pF range
STMicroelectronicsBB8XX SeriesUltra-small SMD packaging, 1-30pF
Skyworks SolutionsSMV SeriesHigh linearity for CATV applications
NXP SemiconductorsBBY SeriesAutomotive-grade temperature stability

7. Selection Guidelines

Key selection criteria:

  • Match capacitance range to required frequency tuning range
  • Select appropriate Q-factor for target frequency (higher Q for microwave applications)
  • Consider temperature stability requirements
  • Evaluate package type (SMD vs. through-hole) for PCB integration
  • Verify voltage ratings against circuit requirements
  • Assess non-linearity requirements for modulation applications

For high-reliability applications, prioritize devices with AEC-Q101 automotive qualification.

8. Industry Trends

Current development trends include:

  • Increased integration with MEMS technology for hybrid tuning solutions
  • Development of GaN-based varactors for millimeter-wave applications
  • Improved capacitance ratios through advanced junction engineering
  • Nanometer-scale dielectrics for ultra-low voltage operation
  • Embedded varactors in SiP (System-in-Package) modules

The market is projected to grow at 6.2% CAGR through 2027, driven by 5G infrastructure and IoT connectivity demands.

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