Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MA2707700L

MA2707700L

Panasonic

RF DIODE STANDAR 35V SSSMINI2-F1

3386

MA2SP050GL

MA2SP050GL

Panasonic

RF DIODE PIN 60V SSMINI2-F4

5757

MA2JP0200L

MA2JP0200L

Panasonic

RF DIODE PIN 60V 150MW SMINI2-F1

85131

MA2SP0500L

MA2SP0500L

Panasonic

RF DIODE PIN 60V SSMINI2-F1

4959

MA2C85900E

MA2C85900E

Panasonic

RF DIODE STANDARD 35V DO34-A1

0

MA2S07700L

MA2S07700L

Panasonic

RF DIODE STANDARD 35V SSMINI2-F2

0

MA2SP010GL

MA2SP010GL

Panasonic

DIODE PIN 60V 150MW SSMINI2-F4

0

MA2C85800E

MA2C85800E

Panasonic

RF DIODE STANDARD 35V DO34-A1

0

MA2SP0200L

MA2SP0200L

Panasonic

DIODE PIN 60V 150MW SSMINI2-F1

0

MA2SP0100L

MA2SP0100L

Panasonic

DIODE PIN 60V 150MW SSMINI2-F1

0

DA2S00100L

DA2S00100L

Panasonic

DIODE STANDARD 40V SSMINI2-F5-B

0

MA2SP060GL

MA2SP060GL

Panasonic

RF DIODE PIN 60V SSMINI2-F4

0

MA2SP0600L

MA2SP0600L

Panasonic

RF DIODE PIN 60V SSMINI2-F1

0

MA27P0700L

MA27P0700L

Panasonic

DIODE PIN 60V 150MW SSSMINI2-F2

0

MA27P0200L

MA27P0200L

Panasonic

DIODE PIN 60V 150MW SSSMINI2-F2

0

MA27P010GL

MA27P010GL

Panasonic

DIODE PIN 60V 150MW SSSMINI2-F3

0

MA27P0100L

MA27P0100L

Panasonic

DIODE PIN 60V 150MW SSSMINI2-F2

0

MA27P1100L

MA27P1100L

Panasonic

RF DIODE PIN 60V SSSMINI2-F2

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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