Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MMBD355LT1G

MMBD355LT1G

Sanyo Semiconductor/ON Semiconductor

DIODE SCHOTTKY 7V 225MW SOT23-3

4440

MMBD701LT1G

MMBD701LT1G

Sanyo Semiconductor/ON Semiconductor

DIODE SCHOTTKY 70V 200MW SOT23-3

5645

1SV267-TB-E

1SV267-TB-E

Sanyo Semiconductor/ON Semiconductor

RF DIODE PIN 50V 150MW 3CP

293724000

MBD770DWT1G

MBD770DWT1G

Sanyo Semiconductor/ON Semiconductor

RF DIODE SCHOTTKY 70V 380MW SC88

578336000

NSVP249SDSF3T1G

NSVP249SDSF3T1G

Sanyo Semiconductor/ON Semiconductor

DIODE PIN 50V 100MW SC70/MCPH3

1842

1SV263-TL-E

1SV263-TL-E

Sanyo Semiconductor/ON Semiconductor

RF DIODE PIN 50V 100MW 3MCP

2913

1SV264-TL-E

1SV264-TL-E

Sanyo Semiconductor/ON Semiconductor

RF DIODE PIN 50V 100MW 3MCP

1671

MMBD352WT1G

MMBD352WT1G

Sanyo Semiconductor/ON Semiconductor

RF DIODE SCHOTTKY 7V 200MW SC70

2172

MMBD354LT1G

MMBD354LT1G

Sanyo Semiconductor/ON Semiconductor

DIODE SCHOTTKY 7V 225MW SOT23-3

6000

1SV249-TL-E

1SV249-TL-E

Sanyo Semiconductor/ON Semiconductor

RF DIODE PIN 50V 100MW 3MCP

251221000

NSVMMBD354LT1G

NSVMMBD354LT1G

Sanyo Semiconductor/ON Semiconductor

DIODE SCHOTTKY 7V 300MW SOT23-3

2023

MMBD301M3T5G

MMBD301M3T5G

Sanyo Semiconductor/ON Semiconductor

DIODE SCHOTTKY 30V 200MW SOT723

2147483647

NSVP264SDSF3T1G

NSVP264SDSF3T1G

Sanyo Semiconductor/ON Semiconductor

DIODE RF VHF UHF AGC

299039000

MPN3700

MPN3700

Sanyo Semiconductor/ON Semiconductor

RF DIODE PIN 200V 280MW TO92

0

MMBD355LT1

MMBD355LT1

Sanyo Semiconductor/ON Semiconductor

DIODE SCHOTTKY 7V 225MW SOT23-3

0

MBD701G

MBD701G

Sanyo Semiconductor/ON Semiconductor

RF DIODE SCHOTTKY 70V 280MW TO92

0

MMBD301LT3

MMBD301LT3

Sanyo Semiconductor/ON Semiconductor

DIODE SCHOTTKY 30V 200MW SOT23-3

0

MMBV3700LT1G

MMBV3700LT1G

Sanyo Semiconductor/ON Semiconductor

RF DIODE PIN 200V 200MW SOT23-3

0

MMVL3700T1

MMVL3700T1

Sanyo Semiconductor/ON Semiconductor

RF DIODE PIN 200V 200MW SOD323

0

MPN3700G

MPN3700G

Sanyo Semiconductor/ON Semiconductor

RF DIODE PIN 200V 280MW TO92

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

RFQ BOM Call Skype Email
Top