Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MG1008-42

MG1008-42

Roving Networks / Microchip Technology

GAAS GUNN EPI DOWN HERMETIC STUD

0

MP61006-M42

MP61006-M42

Roving Networks / Microchip Technology

GAAS PIN HERMETIC PILL

0

MG1006-83B

MG1006-83B

Roving Networks / Microchip Technology

GAAS GUNN EPI DOWN HERMETIC STUD

0

MG1038-M16

MG1038-M16

Roving Networks / Microchip Technology

GAAS GUNN EPI DOWN HERMETIC STUD

0

SMX0508-M1/TR

SMX0508-M1/TR

Roving Networks / Microchip Technology

SI PIN HERMETIC MELF

0

GC6002-450A/TR

GC6002-450A/TR

Roving Networks / Microchip Technology

SI NOISE NON HERMETIC EPSM SMT

0

LSP1005-154-8/TR

LSP1005-154-8/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC EPSM SMT

0

LSP1011-454-2

LSP1011-454-2

Roving Networks / Microchip Technology

SI PIN NON HERMETIC EPSM SMT

0

GC4731-150C/TR

GC4731-150C/TR

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC EPSM SMT

0

SM0511-M1/TR

SM0511-M1/TR

Roving Networks / Microchip Technology

SI PIN HERMETIC MELF

0

SM0512-M1/TR

SM0512-M1/TR

Roving Networks / Microchip Technology

SI PIN HERMETIC MELF

0

MG1010-M11

MG1010-M11

Roving Networks / Microchip Technology

GAAS GUNN EPI DOWN HERMETIC PILL

0

LSP1011-150E

LSP1011-150E

Roving Networks / Microchip Technology

SI PIN NON HERMETIC EPSM SMT

0

MG49870-30

MG49870-30

Roving Networks / Microchip Technology

GAAS GUNN EPI UP HERMETIC PILL

0

LSP1005-154-8

LSP1005-154-8

Roving Networks / Microchip Technology

SI PIN NON HERMETIC EPSM SMT

0

MP61007-P00

MP61007-P00

Roving Networks / Microchip Technology

GAAS PIN NON HERMETIC CHIP

0

MP61008-P00

MP61008-P00

Roving Networks / Microchip Technology

GAAS PIN NON HERMETIC CHIP

0

UM6606SM

UM6606SM

Roving Networks / Microchip Technology

RF DIODE PIN 600V 2.5W

0

GC4225-150B/TR

GC4225-150B/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC EPSM SMT

0

MG1657-M16

MG1657-M16

Roving Networks / Microchip Technology

GAAS GUNN EPI DOWN HERMETIC STUD

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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