Diodes - RF

Image Part Number Description / PDF Quantity Rfq
UPP1004E3/TR13

UPP1004E3/TR13

Roving Networks / Microchip Technology

RF DIODE PIN 100V 2.5W DO216

0

LXP1004-23-0

LXP1004-23-0

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

258

LXP1002-23-2/TR

LXP1002-23-2/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

MPL4702-406

MPL4702-406

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC MMSM

105

LXP1002-23-4/TR

LXP1002-23-4/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

LXP1000-23-2/TR

LXP1000-23-2/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

MML4401-GM3/TR

MML4401-GM3/TR

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC PLASTIC

0

LXP1004-23-2/TR

LXP1004-23-2/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

300

MPL4703-406

MPL4703-406

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC MMSM

0

MPS2R11-608

MPS2R11-608

Roving Networks / Microchip Technology

SI PIN NON HERMETIC MMSM

108

MPP4201-206

MPP4201-206

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC MMSM

254

UPP1002E3/TR13

UPP1002E3/TR13

Roving Networks / Microchip Technology

RF DIODE PIN 100V 2.5W DO216

0

UPP1004/TR13

UPP1004/TR13

Roving Networks / Microchip Technology

RF DIODE PIN 100V 2.5W DO216

0

UPP9401E3/TR7

UPP9401E3/TR7

Roving Networks / Microchip Technology

RF DIODE PIN 50V 2.5W DO216

0

UPP1002/TR13

UPP1002/TR13

Roving Networks / Microchip Technology

RF DIODE PIN 100V 2.5W DO216

0

GMP4232-GM1

GMP4232-GM1

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

295

MML4403-GM2/TR

MML4403-GM2/TR

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC PLASTIC

0

MPP4201-206/TR

MPP4201-206/TR

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC MMSM

0

UMX512

UMX512

Roving Networks / Microchip Technology

SI PPIN HERMETIC MELF

288

MPL4703-206/TR

MPL4703-206/TR

Roving Networks / Microchip Technology

DIODE SI LIMITER NON HERMETIC MM

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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