Diodes - RF

Image Part Number Description / PDF Quantity Rfq
RN739FT106

RN739FT106

ROHM Semiconductor

RF DIODE PIN 50V 100MW UMD3

6156

RN779FFHT106

RN779FFHT106

ROHM Semiconductor

RF DIODE PIN 50V UMD3

0

DAN235ETL

DAN235ETL

ROHM Semiconductor

RF DIODE STANDARD 35V 150MW EMD3

3434

DAP236UT106

DAP236UT106

ROHM Semiconductor

RF DIODE STANDARD 35V 150MW UMD3

17964

RN731KTL

RN731KTL

ROHM Semiconductor

DIODE PIN 50V

0

RN142ZST2R

RN142ZST2R

ROHM Semiconductor

RF DIODE PIN 30V GMD2

0

RN142STE61

RN142STE61

ROHM Semiconductor

RF DIODE PIN 60V 150MW EMD2

0

RN142ZS12ATE61

RN142ZS12ATE61

ROHM Semiconductor

RF DIODE PIN 30V HMD12

0

RN141GT2R

RN141GT2R

ROHM Semiconductor

RF DIODE PIN 50V VMD2

0

RN142SMT2R

RN142SMT2R

ROHM Semiconductor

RF DIODE PIN 60V 100MA SOD-523

0

RN262GT2R

RN262GT2R

ROHM Semiconductor

RF DIODE PIN 30V 100MW VMD2

0

RN142ZS8ATE61

RN142ZS8ATE61

ROHM Semiconductor

RF DIODE PIN 30V 8HMD

0

RN262STE61

RN262STE61

ROHM Semiconductor

RF DIODE PIN SMD

0

1SS390FTE61

1SS390FTE61

ROHM Semiconductor

DIODE BAND SWITCHING EMD2

0

1SS390T9TE61

1SS390T9TE61

ROHM Semiconductor

DIODE BAND SWITCHING EMD2

0

RN142S9HLTE61

RN142S9HLTE61

ROHM Semiconductor

RF DIODE PIN SMD

0

RN142SFHTE61

RN142SFHTE61

ROHM Semiconductor

RF DIODE PIN SMD

0

RN142ST2R

RN142ST2R

ROHM Semiconductor

RF DIODE PIN SMD

0

RN142SFSTE61

RN142SFSTE61

ROHM Semiconductor

RF DIODE PIN SMD

0

RN141CMT2R

RN141CMT2R

ROHM Semiconductor

PIN DIODE 50V 100MA VMN2M

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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