Diodes - RF

Image Part Number Description / PDF Quantity Rfq
L407CDT

L407CDT

CEL (California Eastern Laboratories)

RF PIN DIODE 180V 1W AXIAL GLASS

0

L9204FR

L9204FR

CEL (California Eastern Laboratories)

RF PIN DIODE 180V 1W PLASTIC PKG

0

L407CDB

L407CDB

CEL (California Eastern Laboratories)

RF PIN DIODE 180V 1W AXIAL GLASS

0

L8104R

L8104R

CEL (California Eastern Laboratories)

RF PIN DIODE 180V 3W CERAMIC MEL

0

L8104-240

L8104-240

CEL (California Eastern Laboratories)

RF PIN DIODE 240V 3W CERAMIC MEL

0

L5206FR

L5206FR

CEL (California Eastern Laboratories)

RF PIN DIODE 180V 300MW PLASTIC

0

L8104-240R

L8104-240R

CEL (California Eastern Laboratories)

RF PIN DIODE 240V 3W CERAMIC MEL

0

L8104

L8104

CEL (California Eastern Laboratories)

RF PIN DIODE 180V 3W CERAMIC MEL

99

L5206F

L5206F

CEL (California Eastern Laboratories)

RF PIN DIODE 180V 300MW PLASTIC

70

L8107

L8107

CEL (California Eastern Laboratories)

RF PIN DIODE 90V 1W CERAMIC MELF

0

L5204F

L5204F

CEL (California Eastern Laboratories)

RF PIN DIODE 180V 500MW PLASTIC

74

L9204F

L9204F

CEL (California Eastern Laboratories)

RF PIN DIODE 180V 1W PLASTIC PKG

100

L204BBB

L204BBB

CEL (California Eastern Laboratories)

RF PIN DIODE 28V 200MW AXIAL GLA

0

L204BBT

L204BBT

CEL (California Eastern Laboratories)

RF PIN DIODE 28V 200MW AXIAL GLA

0

L8107R

L8107R

CEL (California Eastern Laboratories)

RF PIN DIODE 90V 1W CERAMIC MELF

0

L5204FR

L5204FR

CEL (California Eastern Laboratories)

RF PIN DIODE 180V 500MW PLASTIC

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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