Diodes - RF

Image Part Number Description / PDF Quantity Rfq
QSMP-381F-TR1G

QSMP-381F-TR1G

Broadcom

DIODE PIN ATTENUATOR

0

HMPS-2822-TR2

HMPS-2822-TR2

Broadcom

RF DIODE SCHOTTKY 15V MINIPAK

0

QSMP-381F-TR2G

QSMP-381F-TR2G

Broadcom

DIODE PIN ATTENUATOR

0

5082-3379

5082-3379

Broadcom

RF DIODE PIN 50V 250MW AXIAL

0

1N5712#T25

1N5712#T25

Broadcom

RF DIODE SCHOTTKY 20V 250MW

0

5082-3379#T25

5082-3379#T25

Broadcom

RF DIODE PIN 50V 250MW AXIAL

0

QSMS-2890-TR1G

QSMS-2890-TR1G

Broadcom

DIODE SCHOTTKY RF

0

QSMS-294C-TR2G

QSMS-294C-TR2G

Broadcom

DIODE SCHOTTKY RF

0

QSMS-2831-TR1G

QSMS-2831-TR1G

Broadcom

DIODE SCHOTTKY RF

0

5082-3039#T50

5082-3039#T50

Broadcom

RF DIODE PIN 150V 250MW AXIAL

0

1N5767#T25

1N5767#T25

Broadcom

RF DIODE PIN 100V 250MW

0

HMPS-2825-TR2

HMPS-2825-TR2

Broadcom

RF DIODE SCHOTTKY 15V MINIPAK

0

QSMS-8202-TR1G

QSMS-8202-TR1G

Broadcom

DIODE SCHOTTKY RF

0

5082-2835#T50

5082-2835#T50

Broadcom

RF DIODE SCHOTTKY 8V 150MW AXIAL

0

5082-3081#T25

5082-3081#T25

Broadcom

RF DIODE PIN 100V 250MW AXIAL

0

5082-3039

5082-3039

Broadcom

RF DIODE PIN 150V 250MW AXIAL

0

QSMS-2890-BLKG

QSMS-2890-BLKG

Broadcom

DIODE SCHOTTKY RF

0

5082-2810#T25

5082-2810#T25

Broadcom

DIODE SCHOTTKY 20V 250MW AXIAL

0

HSMP-386Z-BLKG

HSMP-386Z-BLKG

Broadcom

RF DIODE PIN 50V SOD323

0

5082-2835#T25

5082-2835#T25

Broadcom

RF DIODE SCHOTTKY 8V 150MW AXIAL

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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