Diodes - RF

Image Part Number Description / PDF Quantity Rfq
HMPP-3860-TR1

HMPP-3860-TR1

Broadcom

RF DIODE PIN 50V MINIPAK

0

HSMS-285Y-BLKG

HSMS-285Y-BLKG

Broadcom

RF DIODE SCHOTTKY 2V SOD323

0

HBAT-540B-TR2G

HBAT-540B-TR2G

Broadcom

DIODE SCHOTTKY 30V 825MW SOT323

0

HSMP-481B-TR1

HSMP-481B-TR1

Broadcom

RF DIODE PIN 100V SOT323

0

HSMS-280P-TR2G

HSMS-280P-TR2G

Broadcom

RF DIODE SCHOTTKY 70V SOT363

0

HSMS-282R-TR1G

HSMS-282R-TR1G

Broadcom

RF DIODE SCHOTTKY 15V SOT363

0

HBAT-5400-TR2G

HBAT-5400-TR2G

Broadcom

DIODE SCHOTTKY 30V 250MW SOT23-3

0

HSMS-2829-TR2G

HSMS-2829-TR2G

Broadcom

RF DIODE SCHOTTKY 15V SOT143-4

0

HSMP-386C-BLKG

HSMP-386C-BLKG

Broadcom

RF DIODE PIN 50V SOT323

0

HSMS-282C-TR1G

HSMS-282C-TR1G

Broadcom

RF DIODE SCHOTTKY 15V SOT323

0

HSMS-281E-TR2G

HSMS-281E-TR2G

Broadcom

RF DIODE SCHOTTKY 20V SOT323

0

HSMS-286B-TR1

HSMS-286B-TR1

Broadcom

RF DIODE SCHOTTKY 4V SOT323

0

HSMS-281L-TR1G

HSMS-281L-TR1G

Broadcom

RF DIODE SCHOTTKY 20V SOT363

0

HSMP-3834-TR2G

HSMP-3834-TR2G

Broadcom

RF DIODE PIN 200V 250MW SOT23-3

0

HSMS-2808-TR1G

HSMS-2808-TR1G

Broadcom

RF DIODE SCHOTTKY 70V SOT143-4

0

HSMS-2800-TR2G

HSMS-2800-TR2G

Broadcom

RF DIODE SCHOTTKY 70V SOT23-3

0

HSMS-282L-BLKG

HSMS-282L-BLKG

Broadcom

RF DIODE SCHOTTKY 15V SOT363

0

HSMP-4890-BLKG

HSMP-4890-BLKG

Broadcom

RF DIODE PIN 100V SOT23-3

0

HSMP-389V-TR1G

HSMP-389V-TR1G

Broadcom

RF DIODE PIN 100V SOT363

0

HSMS-2817-TR2G

HSMS-2817-TR2G

Broadcom

RF DIODE SCHOTTKY 20V SOT143-4

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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