| Image | Part Number | Description / PDF | Quantity | Rfq |
|---|---|---|---|---|
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Toshiba Electronic Devices and Storage Corporation |
RF DIODE SCHOTTKY 5V USC |
0 |
|
 |
Toshiba Electronic Devices and Storage Corporation |
RF DIODE SCHOTTKY 10V FSC |
8304 |
|
 |
Toshiba Electronic Devices and Storage Corporation |
RF DIODE PIN 30V SC2 |
5815 |
|
 |
Toshiba Electronic Devices and Storage Corporation |
RF DIODE STANDARD 10V FSC |
1652 |
|
 |
Toshiba Electronic Devices and Storage Corporation |
RF DIODE PIN 30V ESC |
0 |
|
 |
Toshiba Electronic Devices and Storage Corporation |
RF DIODE PIN 30V FSC |
12914 |
|
 |
Toshiba Electronic Devices and Storage Corporation |
RF DIODE STANDARD 10V FSC |
8766 |
|
 |
Toshiba Electronic Devices and Storage Corporation |
RF DIODE STANDARD 10V FSC |
533 |
|
 |
Toshiba Electronic Devices and Storage Corporation |
RF DIODE PIN 50V USC |
4259 |
|
 |
Toshiba Electronic Devices and Storage Corporation |
RF DIODE PIN 30V CST2 |
2740 |
|
 |
Toshiba Electronic Devices and Storage Corporation |
RF DIODE STANDARD 30V USC |
12163 |
|
 |
Toshiba Electronic Devices and Storage Corporation |
RF DIODE PIN 30V ESC |
0 |
|
 |
Toshiba Electronic Devices and Storage Corporation |
RF DIODE STANDARD 15V FSC |
17329 |
|
 |
Toshiba Electronic Devices and Storage Corporation |
RF DIODE SCHOTTKY 4V SSM |
0 |
|
 |
Toshiba Electronic Devices and Storage Corporation |
RF DIODE PIN 30V CST4 |
0 |
|
RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.
| Type | Functional Characteristics | Application Examples |
|---|---|---|
| PIN Diode | High switching speed, low capacitance | RF switches, attenuators, phase shifters |
| Schottky Diode | Low forward voltage, fast recovery time | RF detectors, mixers, power rectifiers |
| Varactor Diode | Voltage-dependent capacitance | Tunable filters, frequency multipliers |
| Gunn Diode | Negative resistance characteristic | Millimeter-wave oscillators, radar sensors |
| Avalanche Diode | Controlled reverse breakdown | High-power RF switching, protection circuits |
RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.
| Parameter | Typical Range | Significance |
|---|---|---|
| Frequency Range | 100 MHz - 100 GHz | Determines operational bandwidth |
| Reverse Breakdown Voltage | 5-200 V | Defines power handling capability |
| Forward Current (IF) | 10 mA - 1 A | Affects switching performance |
| Capacitance (Cj) | 0.1-5 pF | Impacts high-frequency response |
| Power Dissipation | 100 mW - 10 W | Thermal management consideration |
| Insertion Loss | 0.1-1.5 dB | Signal transmission efficiency |
| Switching Time | 1-100 ns | Dynamic performance metric |
Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)
| Manufacturer | Product Series | Key Specifications |
|---|---|---|
| ON Semiconductor | MMD3100 | 40 GHz PIN diode, 0.25 pF Cj |
| STMicroelectronics | 1N5711 | 70 V Schottky diode, 1 ns recovery time |
| Infineon | BAR64-02V | Varactor diode, 4:1 tuning ratio |
| Qorvo | DMK4035SS | GaAs MMIC diode, 25 W power handling |
| Skyworks | ASD2100 | Avalanche diode, 0.15 dB insertion loss |
Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.
Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)