Diodes - RF

Image	Part Number	Description / PDF	Quantity	Rfq
	DMV1500HFD STMicroelectronics	RF DIODE STANDAR 1500V TO220FPAB	0
	DMV1500MFD STMicroelectronics	RF DIODE STANDAR 1500V TO220FPAB	0
	DMV1500LF5 STMicroelectronics	DIODE STANDAR 1500V TO220FPAB F5	0
	DMV1500LFD5 STMicroelectronics	DIODE STANDAR 1500V TO220FPAB F5	0
	DMV1500LFD STMicroelectronics	RF DIODE STANDAR 1500V TO220FPAB	0
	DMV1500HFD5 STMicroelectronics	DIODE STANDAR 1500V TO220FPAB F5	0
	DMV1500SDFD STMicroelectronics	RF DIODE STANDAR 1500V TO220FPAB	0
	STDD15-05WFILM STMicroelectronics	RF DIODE STANDARD 15V SOT323	0
	DMV1500MFD5 STMicroelectronics	DIODE STANDAR 1500V TO220FPAB F5	0
	DMV1500HDFD6 STMicroelectronics	DIODE STANDAR 1500V TO220FPABFD6	0
	DMV1500HDFD STMicroelectronics	RF DIODE STANDAR 1500V TO220FPAB	0
	DMV1500SDFD6 STMicroelectronics	DIODE STANDAR 1500V TO220FPABFD6	0
	DMV1500L STMicroelectronics	RF DIODE STANDAR 1500V TO220FPAB	0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
PIN Diode	High switching speed, low capacitance	RF switches, attenuators, phase shifters
Schottky Diode	Low forward voltage, fast recovery time	RF detectors, mixers, power rectifiers
Varactor Diode	Voltage-dependent capacitance	Tunable filters, frequency multipliers
Gunn Diode	Negative resistance characteristic	Millimeter-wave oscillators, radar sensors
Avalanche Diode	Controlled reverse breakdown	High-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

Parameter	Typical Range	Significance
Frequency Range	100 MHz - 100 GHz	Determines operational bandwidth
Reverse Breakdown Voltage	5-200 V	Defines power handling capability
Forward Current (I_F)	10 mA - 1 A	Affects switching performance
Capacitance (C_j)	0.1-5 pF	Impacts high-frequency response
Power Dissipation	100 mW - 10 W	Thermal management consideration
Insertion Loss	0.1-1.5 dB	Signal transmission efficiency
Switching Time	1-100 ns	Dynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

Manufacturer	Product Series	Key Specifications
ON Semiconductor	MMD3100	40 GHz PIN diode, 0.25 pF C_j
STMicroelectronics	1N5711	70 V Schottky diode, 1 ns recovery time
Infineon	BAR64-02V	Varactor diode, 4:1 tuning ratio
Qorvo	DMK4035SS	GaAs MMIC diode, 25 W power handling
Skyworks	ASD2100	Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)