Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
DB3J313K0L

DB3J313K0L

Panasonic

DIODE SCHOTTKY 30V 200MA SMINI3

6439

DA3J101K0L

DA3J101K0L

Panasonic

DIODE GEN PURP 80V 100MA SMINI3

45

MA3J7440GL

MA3J7440GL

Panasonic

DIODE SCHOTTKY 30V 200MA SMINI3

5965

DB2G43200L1

DB2G43200L1

Panasonic

CSP SCHOTTKY BARRIER DIODE

235

MA3Z7920GL

MA3Z7920GL

Panasonic

DIODE SCHOTTKY 30V 100MA SMINI3

1644

MA3J142KGL

MA3J142KGL

Panasonic

DIODE GEN PURP 80V 100MA SMINI3

957

DB2440200L

DB2440200L

Panasonic

DIODE SCHOTTKY 40V 2A TMINIP2

0

DB2731400L

DB2731400L

Panasonic

DIODE SCHOTTKY 30V 30MA SSSMINI2

17

DB2440300L

DB2440300L

Panasonic

DIODE SCHOTTKY 40V 3A TMINIP2

4624

MA27077G0L

MA27077G0L

Panasonic

DIODE GP 35V 100MA SSSMINI2-F3

1971

MA3X15800L

MA3X15800L

Panasonic

DIODE GEN PURP 200V 100MA MINI3

175

MA2C0290BF

MA2C0290BF

Panasonic

DIODE GEN PURP 6V 50MA DO34

498

MA3J142A0L

MA3J142A0L

Panasonic

DIODE GEN PURP 80V 100MA SMINI3

36068

MAU2D3000B

MAU2D3000B

Panasonic

DIODE SCHOTTKY 30V 100MA USSMINI

10946

DB2460200L

DB2460200L

Panasonic

DIODE SCHOTTKY 60V 3A TMINIP2

5

DA2J10700L

DA2J10700L

Panasonic

DIODE GEN PURP 300V 100MA SMINI2

0

MA3X028WAL

MA3X028WAL

Panasonic

DIODE GEN PURP 6V 100MA MINI3

2751

MA4L11100A

MA4L11100A

Panasonic

DIODE GEN PURP 80V LEADLESS

7991

MA3J74100L

MA3J74100L

Panasonic

DIODE SCHOTTKY 30V 30MA SMINI3

1806

MA3X1000GL

MA3X1000GL

Panasonic

DIODE GEN PURP 200V 100MA SMINI3

5259

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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