Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
NTE5835

NTE5835

NTE Electronics, Inc.

R-200 PRV 3A ANODE CASE

112

NTE5850

NTE5850

NTE Electronics, Inc.

R-50PRV 6A CATH CASE

81

NTE517

NTE517

NTE Electronics, Inc.

D-15KV FOR MICROWAVE OVEN

2047

NTE5874

NTE5874

NTE Electronics, Inc.

R-200PRV 12A CATH CASE

46

NTE5821

NTE5821

NTE Electronics, Inc.

R-400 PRV 12A ANODE CASE

68

NTE5919

NTE5919

NTE Electronics, Inc.

R-300PRV 20A ANODE CASE

32

NTE6107

NTE6107

NTE Electronics, Inc.

R-1600PRV 450A ANODE CASE

11

NTE641

NTE641

NTE Electronics, Inc.

R-SCHOTTKY 60V 2A DO214AA

4656

NTE5815HC

NTE5815HC

NTE Electronics, Inc.

R-SI 600V 10AMP

8424

NTE6155

NTE6155

NTE Electronics, Inc.

R-400PRV 150A ANODE CASE

26

NTE5801

NTE5801

NTE Electronics, Inc.

R-100 PRV 3A AXIAL LEAD

7883

NTE5905

NTE5905

NTE Electronics, Inc.

R-600PRV 16A ANODE CASE

72

NTE5911

NTE5911

NTE Electronics, Inc.

R-1000 PRV 16A ANODE CASE

3

NTE6114

NTE6114

NTE Electronics, Inc.

R-1600PRV 1100A

4

NTE6036

NTE6036

NTE Electronics, Inc.

R-600V 85A FAST REC KK

22

NTE6121

NTE6121

NTE Electronics, Inc.

R-1600V 1200A

8

NTE6084

NTE6084

NTE Electronics, Inc.

R-SCHOTTKY RECT.CATH CASE

52

NTE5819

NTE5819

NTE Electronics, Inc.

R-200 PRV 12A ANODE CASE

12

NTE6362

NTE6362

NTE Electronics, Inc.

R-1400PRV 300A CATH CASE

12

NTE637

NTE637

NTE Electronics, Inc.

D-SI SCHOTTKY 30V 200MA

1458

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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