Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
PMEG4010ESBYL

PMEG4010ESBYL

Nexperia

DIODE SCHOTTKY 40V 1A DSN1006-2

20092

PMBD6050,235

PMBD6050,235

Nexperia

DIODE GEN PURP 70V 215MA SOT23

0

PMEG2015EA,115

PMEG2015EA,115

Nexperia

DIODE SCHOTTKY 20V 1.5A SOD323

3147

PMEG60T20ELRX

PMEG60T20ELRX

Nexperia

PMEG60T20ELR SOD123 SOD2

11898

BAS21,215

BAS21,215

Nexperia

DIODE GP 200V 200MA TO236AB

32141

BAV102,115

BAV102,115

Nexperia

DIODE GEN PURP 150V 250MA LLDS

0

PMEG2020EH,115

PMEG2020EH,115

Nexperia

DIODE SCHOTTKY 20V 2A SOD123F

30105

PMEG3010ET,215

PMEG3010ET,215

Nexperia

DIODE SCHOTTKY 30V 1A SOT23

12865

PMEG2005EJ,115

PMEG2005EJ,115

Nexperia

DIODE SCHOTTKY 20V 500MA SOD323F

14797

PMLL4148L,115

PMLL4148L,115

Nexperia

DIODE GEN PURP 75V 200MA LLDS

9062

BAS21QCZ

BAS21QCZ

Nexperia

DIODE GEN PURP 200V 250MA 3DFN

5000

PMEG060V100EPDZ

PMEG060V100EPDZ

Nexperia

DIODE SCHOTTKY 60V 10A CFP15

24937

PMEG6010ELRX

PMEG6010ELRX

Nexperia

DIODE SCHOTTKY 60V 1A CFP3

14656

BAS321/8X

BAS321/8X

Nexperia

DIODE GEN PURP 200V 250MA SOD323

0

PMEG3010EH,115

PMEG3010EH,115

Nexperia

DIODE SCHOTTKY 30V 1A SOD123F

8837

BAS16J/ZLX

BAS16J/ZLX

Nexperia

BAS16J - HIGH-SPEED SWITCHING DI

63000

BAS16J,115

BAS16J,115

Nexperia

DIODE GP 100V 250MA SOD323F

398241

BAT720,215

BAT720,215

Nexperia

DIODE SCHOTTKY 40V 500MA TO236AB

4539

PMEG2005BELD,315

PMEG2005BELD,315

Nexperia

DIODE SCHOT 20V 500MA DFN1006-2

185

PMEG3005EGWJ

PMEG3005EGWJ

Nexperia

DIODE SCHOTTKY 30V 500MA SOD123

4392

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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