Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
BAS16GWJ

BAS16GWJ

Nexperia

DIODE GEN PURP 100V 215MA SOD123

21183

BAS16QAZ

BAS16QAZ

Nexperia

DIODE GP 100V 290MA DFN1010D-3

0

PMEG4020EP,115

PMEG4020EP,115

Nexperia

DIODE SCHOTTKY 40V 2A CFP5

7233

1PS79SB31,315

1PS79SB31,315

Nexperia

DIODE SCHOTTKY 30V 200MA SOD523

0

PMEG6002EBF

PMEG6002EBF

Nexperia

DIODE SCHOTTKY 60V 200MA SOD523

0

PMEG6010CPASX

PMEG6010CPASX

Nexperia

DIODE SCHOTTKY 60V 1A SOT1061

0

PMEG4005AEV,115

PMEG4005AEV,115

Nexperia

DIODE SCHOTTKY 40V 500MA SOT666

8

BAS116,235

BAS116,235

Nexperia

DIODE GEN PURP 75V 215MA TO236AB

139848

PMEG060V100EPDAZ

PMEG060V100EPDAZ

Nexperia

DIODE SCHOTTKY 60V 10A CFP15

2787

PMEG4020EPK,315

PMEG4020EPK,315

Nexperia

DIODE SCHOTTKY 40V 2A 2DFN

135762

PMEG050T150EIPDZ

PMEG050T150EIPDZ

Nexperia

PMEG050T150EIPD/SOT1289/CFP15

1330

PMEG3050BEP,115

PMEG3050BEP,115

Nexperia

DIODE SCHOTTKY 30V 5A SOD128

26793

ES2DVRX

ES2DVRX

Nexperia

ES2DVR - 200 V, 2 A HYPERFAST PN

168000

BAS521,135

BAS521,135

Nexperia

DIODE GEN PURP 300V 250MA SOD523

7638

PMEG6010CEH,115

PMEG6010CEH,115

Nexperia

DIODE SCHOTTKY 60V 1A SOD123F

147418

ES1DVRX

ES1DVRX

Nexperia

ES1DVR - 200 V, 1 A HYPERFAST PN

181422

PMEG4010BEA,115

PMEG4010BEA,115

Nexperia

DIODE SCHOTTKY 40V 1A SOD323

0

PMEG4002EJ,115

PMEG4002EJ,115

Nexperia

DIODE SCHOTTKY 40V 200MA SOD323F

4567

PMEG050V150EPDAZ

PMEG050V150EPDAZ

Nexperia

DIODE SCHOTTKY 50V 15A CFP15

3325

PMEG4005EJF

PMEG4005EJF

Nexperia

PMEG4005EJ/SOD323/SOD2

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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