Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
PMEG120G30ELPJ

PMEG120G30ELPJ

Nexperia

PMEG120G30ELP/SOD128/FLATPOWER

0

PMEG2010BER,115

PMEG2010BER,115

Nexperia

DIODE SCHOTTKY 20V 1A CFP3

7099

BAS316Z

BAS316Z

Nexperia

DIODE GEN PURP 100V 250MA SC76-2

46672

BAS45AL,115

BAS45AL,115

Nexperia

DIODE GEN PURP 125V 250MA LLDS

13512

RB521S30,115

RB521S30,115

Nexperia

DIODE SCHOTTKY 30V 200MA SOD523

6976

PMEG3015EJ,115

PMEG3015EJ,115

Nexperia

DIODE SCHOTTKY 30V 1.5A SOD323F

17843

BAT86,133

BAT86,133

Nexperia

DIODE SCHOTTKY 50V 200MA DO34

385

BAT54GWX

BAT54GWX

Nexperia

DIODE SCHOTTKY 30V 200MA SOD123

2216

PMEG050V150EPDZ

PMEG050V150EPDZ

Nexperia

DIODE SCHOTTKY 50V 15A CFP15

7859

RB751S40,115

RB751S40,115

Nexperia

DIODE SCHOTTKY 40V 120MA SOD523

34243

PMEG2005AEA,115

PMEG2005AEA,115

Nexperia

DIODE SCHOTTKY 20V 500MA SOD323

7772

PMEG2005EL,315

PMEG2005EL,315

Nexperia

DIODE SCHOT 20V 500MA DFN1006-2

0

BAS40W,115

BAS40W,115

Nexperia

NOW NEXPERIA BAS40W - RECTIFIER

65868

PMEG3005ELD,315

PMEG3005ELD,315

Nexperia

DIODE SCHOTTKY 30V 500MA SOD882D

3472

PMEG6030EP,115

PMEG6030EP,115

Nexperia

DIODE SCHOT 60V 3A SOD128/CFP5

69436

ES2DR115

ES2DR115

Nexperia

200V, 2A HYPERFAST PN-RECTIFIER

0

BAS521,115

BAS521,115

Nexperia

DIODE GEN PURP 300V 250MA SOD523

0

PMEG40T30EPX

PMEG40T30EPX

Nexperia

DIODE SCHOTTKY 40V 3A CFP5

630

PMEG2005AEL,315

PMEG2005AEL,315

Nexperia

DIODE SCHOT 20V 500MA DFN1006-2

0

PMEG3005EGWX

PMEG3005EGWX

Nexperia

DIODE SCHOTTKY 30V 500MA SOD123

559

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
RFQ BOM Call Skype Email
Top