Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
PMEG2020CPAS115

PMEG2020CPAS115

Nexperia

RECTIFIER DIODE, SCHOTTKY

0

BAS21THR

BAS21THR

Nexperia

BAS21TH/SOT23/TO-236AB

2729

PMEG3005ET,215

PMEG3005ET,215

Nexperia

DIODE SCHOTTKY 30V 500MA SOT23

19462

PMEG3010BEV,115

PMEG3010BEV,115

Nexperia

DIODE SCHOTTKY 30V 1A SOT666

1870

BAT754,215

BAT754,215

Nexperia

DIODE SCHOTTKY 30V 200MA TO236AB

17116

BAS16GWX

BAS16GWX

Nexperia

DIODE GEN PURP 100V 215MA SOD123

0

BAV102,135

BAV102,135

Nexperia

DIODE GEN PURP 150V 250MA LLDS

2097

BAT54GWJ

BAT54GWJ

Nexperia

DIODE SCHOTTKY 30V 200MA SOD123

0

PMEG060V050EPDZ

PMEG060V050EPDZ

Nexperia

DIODE SCHOTTKY 60V 5A CFP15

1335

RB521CS30L,315

RB521CS30L,315

Nexperia

DIODE SCHOTTKY 30V 100MA SOD882

0

PMEG100T080ELPEZ

PMEG100T080ELPEZ

Nexperia

DIODE SCHOTTKY 100V 8A CFP15B

0

PMEG2015EV,115

PMEG2015EV,115

Nexperia

DIODE SCHOTTKY 20V 1.5A SOT666

3456

PMEG3002AELD,315

PMEG3002AELD,315

Nexperia

RECTIFIER DIODE, SCHOTTKY, 0.2A,

0

BAS16LSYL

BAS16LSYL

Nexperia

DIODE GEN PURP 100V 215MA 2DFN

10000

PMEG3020DEP,115

PMEG3020DEP,115

Nexperia

DIODE SCHOTTKY 30V 2A CFP5

9165

BAT85,113

BAT85,113

Nexperia

DIODE SCHOTTKY 30V 200MA DO34

29600

BAS45A,113

BAS45A,113

Nexperia

DIODE GEN PURP 125V 250MA DO34

7367

BAS716F

BAS716F

Nexperia

DIODE GEN PURP 75V 200MA SOD523

0

PMEG4002ELD,315

PMEG4002ELD,315

Nexperia

DIODE SCHOT 40V 200MA DFN1006D-2

2780

PMEG3030EP,115

PMEG3030EP,115

Nexperia

DIODE SCHOTTKY 30V 3A CFP5

65272

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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