Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
PMEG045V150EPDZ

PMEG045V150EPDZ

Nexperia

DIODE SCHOTTKY 45V 15A CFP15

4900

PMEG4005EPK,315

PMEG4005EPK,315

Nexperia

DIODE SCHOT 40V 500MA DFN1608D-2

1919

PMEG3010BEA,135

PMEG3010BEA,135

Nexperia

DIODE SCHOTTKY 30V 1A SOD323

7144

PMEG2002AESFBYL

PMEG2002AESFBYL

Nexperia

DIODE SCHTKY 20V 200MA DSN0603B2

0

PMEG60T50ELPX

PMEG60T50ELPX

Nexperia

PMEG60T50ELP/SOD128/FLATPOWER

7063

BAS70,215

BAS70,215

Nexperia

DIODE SCHOTTKY 70V 70MA TO236AB

23383

PMLL4448,115

PMLL4448,115

Nexperia

DIODE GEN PURP 75V 200MA LLDS

52197

PMEG6010CEGWJ

PMEG6010CEGWJ

Nexperia

DIODE SCHOTTKY 60V 1A SOD123

44

PMEG3020EGWX

PMEG3020EGWX

Nexperia

DIODE SCHOTTKY 30V 2A SOD123

13128

PMEG045V100EPDAZ

PMEG045V100EPDAZ

Nexperia

DIODE SCHOTTKY 45V 10A CFP15

3424

PMEG4020ER,115

PMEG4020ER,115

Nexperia

DIODE SCHOTTKY 40V 2A SOD123W

64809

PMEG2005AELD,315

PMEG2005AELD,315

Nexperia

DIODE SCHOTTKY 20V 500MA SOD882D

1824

PMEG4005AESFYL

PMEG4005AESFYL

Nexperia

DIODE SCHOTTKY 40V 0.5A SOD962

0

PMEG6010CEJ/ZL115

PMEG6010CEJ/ZL115

Nexperia

RECTIFIER DIODE, SCHOTTKY

167565

1N4531,133

1N4531,133

Nexperia

DIODE GEN PURP 75V 200MA DO34

4510

BAS86,115

BAS86,115

Nexperia

DIODE SCHOTTKY 50V 200MA LLDS

81

PMEG120G30ELPX

PMEG120G30ELPX

Nexperia

PMEG120G30ELP/SOD128/FLATPOWER

8946

BAT85,133

BAT85,133

Nexperia

DIODE SCHOTTKY 30V 200MA DO34

11201

1PS79SB30,115

1PS79SB30,115

Nexperia

DIODE SCHOTTKY 40V 200MA SOD523

133

PMEG40T50EPX

PMEG40T50EPX

Nexperia

DIODE SCHOTTKY 40V 5A CFP5

1220

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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