Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
RB550SS-30T2R

RB550SS-30T2R

ROHM Semiconductor

DIODE SCHOTTKY 30V 500MA 1608

0

RB521ZS-306EPT2R

RB521ZS-306EPT2R

ROHM Semiconductor

DIODE SCHOTTKY 100MA 8SMD

0

1SS400GT2R

1SS400GT2R

ROHM Semiconductor

DIODE GEN PURP 80V 100MA VMD2

0

1N4148T-77

1N4148T-77

ROHM Semiconductor

DIODE GEN PURP 75V 150MA GSD

0

RLS245TE-11

RLS245TE-11

ROHM Semiconductor

DIODE GEN PURP 220V 200MA LLDS

0

RFN5B6STL

RFN5B6STL

ROHM Semiconductor

DIODE GEN PURP 600V 5A CPD

0

1SS244T-72

1SS244T-72

ROHM Semiconductor

DIODE GEN PURP 220V 200MA MSD

0

RB521ZS-30T2R_1

RB521ZS-30T2R_1

ROHM Semiconductor

DIODE SCHOTTKY 100MA 8SMD

0

RB160A30T-32

RB160A30T-32

ROHM Semiconductor

DIODE SCHOTTKY 30V 1A MSR

0

RF301B2STL

RF301B2STL

ROHM Semiconductor

DIODE GEN PURP 200V 3A CPD

0

RBE05SM20AT2RB

RBE05SM20AT2RB

ROHM Semiconductor

DIODE SCHOTTKY 20V 500MA SOD523

0

RLS139TE-11

RLS139TE-11

ROHM Semiconductor

DIODE GEN PURP 80V 130MA LLDS

0

RSX501LA-20TR

RSX501LA-20TR

ROHM Semiconductor

DIODE SCHOTTKY 20V 5A PMDT

0

RB050LA-40TR

RB050LA-40TR

ROHM Semiconductor

DIODE SCHOTTKY 40V 3A PMDT

0

RLS4150TE-11

RLS4150TE-11

ROHM Semiconductor

DIODE GEN PURP 50V 200MA LLDS

0

RB521ZS-309ST2R

RB521ZS-309ST2R

ROHM Semiconductor

DIODE SCHOTTKY 100MA 8SMD

0

RB160A90T-32

RB160A90T-32

ROHM Semiconductor

DIODE SCHOTTKY 90V 1A MSR

0

RFN10B3STL

RFN10B3STL

ROHM Semiconductor

DIODE GEN PURP 350V 10A CPD

0

1SR124-400AT-82

1SR124-400AT-82

ROHM Semiconductor

DIODE GEN PURP 400V 1A DO41

0

RLS-73TE-11

RLS-73TE-11

ROHM Semiconductor

DIODE GEN PURP 80V 130MA LLDS

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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