Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
SIDC08D120H8X1SA1

SIDC08D120H8X1SA1

IR (Infineon Technologies)

DIODE GEN PURP 1.2KV 150A WAFER

0

IDC40D120T6MX1SA4

IDC40D120T6MX1SA4

IR (Infineon Technologies)

DIODE GEN PURP 1.2KV 75A WAFER

0

IRD3CH82DB6

IRD3CH82DB6

IR (Infineon Technologies)

DIODE GEN PURP 1.2KV 150A DIE

0

SIDC08D60C6

SIDC08D60C6

IR (Infineon Technologies)

DIODE GEN PURP 600V 30A WAFER

0

SIDC14D60E6X7SA1

SIDC14D60E6X7SA1

IR (Infineon Technologies)

DIODE SWITCHING 600V WAFER

0

SIDC04D60F6X1SA2

SIDC04D60F6X1SA2

IR (Infineon Technologies)

DIODE SWITCHING 600V WAFER

0

SIDC08D60C8X1SA3

SIDC08D60C8X1SA3

IR (Infineon Technologies)

DIODE GEN PURP 600V 30A WAFER

0

IRD3CH24DF6

IRD3CH24DF6

IR (Infineon Technologies)

DIODE CHIP EMITTER CONTROLLED

0

IRD3CH16DD6

IRD3CH16DD6

IR (Infineon Technologies)

DIODE CHIP EMITTER CONTROLLED

0

IDT05S60CHKSA1

IDT05S60CHKSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 600V TO220-2

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
RFQ BOM Call Skype Email
Top