Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
SIDC09D60F6X1SA4

SIDC09D60F6X1SA4

IR (Infineon Technologies)

DIODE SWITCHING 600V WAFER

0

IRD3CH101DD6

IRD3CH101DD6

IR (Infineon Technologies)

DIODE CHIP EMITTER CONTROLLED

0

SIDC05D60C8X1SA1

SIDC05D60C8X1SA1

IR (Infineon Technologies)

DIODE GEN PURP 600V 15A WAFER

0

SIDC42D120H8X1SA3

SIDC42D120H8X1SA3

IR (Infineon Technologies)

DIODE GEN PURP 1.2KV 75A WAFER

0

IDC08S60CEX1SA2

IDC08S60CEX1SA2

IR (Infineon Technologies)

DIODE SIC 600V 8A SAWN WAFER

0

IDT08S60CHKSA1

IDT08S60CHKSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 600V TO220-2

0

SIDC14D60F6X1SA4

SIDC14D60F6X1SA4

IR (Infineon Technologies)

DIODE SWITCHING 600V WAFER

0

36DN30ELEMENTEVXPSA1

36DN30ELEMENTEVXPSA1

IR (Infineon Technologies)

DIODE GENERAL PURPOSE E-EUPEC-0

0

SIDC105D120H8X1SA1

SIDC105D120H8X1SA1

IR (Infineon Technologies)

DIODE GEN PURP 1.2KV 200A WAFER

0

IDC08S120EX1SA3

IDC08S120EX1SA3

IR (Infineon Technologies)

DIODE SCHOTTKY 1.2KV 7.5A WAFER

0

IRD3CH9DF6

IRD3CH9DF6

IR (Infineon Technologies)

DIODE CHIP EMITTER CONTROLLED

0

SIDC81D120E6X1SA4

SIDC81D120E6X1SA4

IR (Infineon Technologies)

DIODE GEN PURP 1.2KV 100A WAFER

0

IRD3CH24DD6

IRD3CH24DD6

IR (Infineon Technologies)

DIODE CHIP EMITTER CONTROLLED

0

SIDC06D60F6X7SA1

SIDC06D60F6X7SA1

IR (Infineon Technologies)

DIODE SWITCHING 600V WAFER

0

SIDC73D170E6X1SA2

SIDC73D170E6X1SA2

IR (Infineon Technologies)

DIODE GEN PURP 1.7KV 100A WAFER

0

17DN02S01EVOPRXPSA1

17DN02S01EVOPRXPSA1

IR (Infineon Technologies)

DIODE E-EUPEC-0

0

SIDC42D120E6X1SA4

SIDC42D120E6X1SA4

IR (Infineon Technologies)

DIODE GEN PURP 1.2KV 50A WAFER

0

SIDC26D60C6

SIDC26D60C6

IR (Infineon Technologies)

DIODE GEN PURP 600V 100A WAFER

0

SIDC08D60C8X1SA1

SIDC08D60C8X1SA1

IR (Infineon Technologies)

DIODE GEN PURP 600V 30A WAFER

0

SIDC03D60F6X1SA1

SIDC03D60F6X1SA1

IR (Infineon Technologies)

DIODE SWITCHING 600V WAFER

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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