Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
BAS16/CH235

BAS16/CH235

NXP Semiconductors

RECTIFIER DIODE, 0.215A, 100V

0

BAT54W135

BAT54W135

NXP Semiconductors

NOW NEXPERIA BAT54W - RECTIFIER

30000

BYC20DX-600P127

BYC20DX-600P127

NXP Semiconductors

HYPERFAST RECTIFIER DIODE TO 22

2143

BYC15-600PQ127

BYC15-600PQ127

NXP Semiconductors

HYPERFAST RECTIFIER DIODE

571

BAT54S/S501215

BAT54S/S501215

NXP Semiconductors

RECTIFIER DIODE, SCHOTTKY

216000

BAS16/DG215

BAS16/DG215

NXP Semiconductors

RECTIFIER DIODE, 0.215A, 100V

102000

BAS16W,135

BAS16W,135

NXP Semiconductors

NOW NEXPERIA BAS16W - RECTIFIER

1020000

BAS19/ZL215

BAS19/ZL215

NXP Semiconductors

RECTIFIER DIODE, 0.2A, 120V

0

BAT54CW/6115

BAT54CW/6115

NXP Semiconductors

RECTIFIER DIODE, SCHOTTKY

429000

BAS70VV115

BAS70VV115

NXP Semiconductors

NEXPERIA BAS70VV - RECTIFIER, SC

0

BAS21/ZL215

BAS21/ZL215

NXP Semiconductors

BAS21 - RECTIFIER DIODE

0

BAT54/6215

BAT54/6215

NXP Semiconductors

RECTIFIER DIODE, SCHOTTKY

0

PMEG6020AELR115

PMEG6020AELR115

NXP Semiconductors

RECTIFIER DIODE, SCHOTTKY

0

PMEG2010EPAS115

PMEG2010EPAS115

NXP Semiconductors

RECTIFIER DIODE, SCHOTTKY

0

BAV170235

BAV170235

NXP Semiconductors

RECTIFIER DIODE, 2 ELEMENT, 0.21

0

BAS16/DG/B4215

BAS16/DG/B4215

NXP Semiconductors

RECTIFIER DIODE, 0.215A, 100V

0

BYV29FD-600,118

BYV29FD-600,118

NXP Semiconductors

NOW WEEN - BYV29FD-600 - ULTRAFA

79999

BAT54A/DG/B4215

BAT54A/DG/B4215

NXP Semiconductors

RECTIFIER DIODE, SCHOTTKY

299800

BYC5B-600,118

BYC5B-600,118

NXP Semiconductors

NOW WEEN - BYC5B-600 - HYPERFAST

1617

BAW62,143

BAW62,143

NXP Semiconductors

RECTIFIER DIODE

45000

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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