Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
BY459-1500,127

BY459-1500,127

NXP Semiconductors

DIODE GEN PURP 1.5KV 12A TO220AC

0

1PS59SB10,115

1PS59SB10,115

NXP Semiconductors

DIODE SCHOTTKY 30V 200MA SMT3

0

PRLL5817,135

PRLL5817,135

NXP Semiconductors

DIODE SCHOTTKY 20V 1A MELF

0

BAT54/LF1R

BAT54/LF1R

NXP Semiconductors

DIODE SCHOTTKY TO-236AB

0

1PS59SB20,115

1PS59SB20,115

NXP Semiconductors

DIODE SCHOTTKY 40V 500MA SMT3

0

BY229-600,127

BY229-600,127

NXP Semiconductors

DIODE GEN PURP 500V 8A TO220AC

0

BYD17J,115

BYD17J,115

NXP Semiconductors

DIODE AVALANCHE 600V 1.5A MELF

0

BY359X-1500S,127

BY359X-1500S,127

NXP Semiconductors

DIODE GEN PURP 1.5KV 7A TO220F

0

BYC8B-600PQP

BYC8B-600PQP

NXP Semiconductors

DIODE GEN PURP 600V 8A

0

NUR460,133

NUR460,133

NXP Semiconductors

DIODE GEN PURP 600V 4A DO201AD

0

BAT254,115

BAT254,115

NXP Semiconductors

DIODE SCHOTTKY 30V 200MA SOD2

0

NUR460/L04,112

NUR460/L04,112

NXP Semiconductors

DIODE GEN PURP 600V 4A DO201AD

0

BAS216,115

BAS216,115

NXP Semiconductors

DIODE GEN PURP 75V 250MA SOD2

0

BAW62,133

BAW62,133

NXP Semiconductors

DIODE GEN PURP 75V 250MA ALF2

0

PRLL5818,115

PRLL5818,115

NXP Semiconductors

DIODE SCHOTTKY 30V 1A MELF

0

BYD37M,115

BYD37M,115

NXP Semiconductors

DIODE AVALANCHE 1KV 600MA MELF

0

BAS316/ZLF

BAS316/ZLF

NXP Semiconductors

DIODE GEN PURP 100V 215MA SOD323

0

BYD77D,115

BYD77D,115

NXP Semiconductors

DIODE AVALANCHE 200V 850MA MELF

0

1N4448,113

1N4448,113

NXP Semiconductors

DIODE GEN PURP 100V 200MA ALF2

0

BAS116T,115

BAS116T,115

NXP Semiconductors

DIODE GEN PURP 75V 215MA SC75

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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