Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
BAV45

BAV45

Central Semiconductor

DIODE GEN PURP 20V 50MA TO18

0

UF4004 TR

UF4004 TR

Central Semiconductor

DIODE GEN PURP 400V 1A DO41

0

CN646 TR

CN646 TR

Central Semiconductor

DIODE GP 300V 400MA DO-41SP

0

CN647 BK

CN647 BK

Central Semiconductor

DIODE GP 400V 400MA DO-41SP

0

1N4004GPP TR

1N4004GPP TR

Central Semiconductor

DIODE GEN PURP 400V 1A DO41

0

1N4002SP BK

1N4002SP BK

Central Semiconductor

DIODE GEN PURP 100V 1A DO41

0

1N485B BK

1N485B BK

Central Semiconductor

DIODE GP 200V 200MA DO204AL

0

CR5F-080 BK

CR5F-080 BK

Central Semiconductor

DIODE GEN PURP 800V 5A DO201AD

0

UF4001 BK

UF4001 BK

Central Semiconductor

DIODE GEN PURP 50V 1A DO41

0

CR3-120GPP TR

CR3-120GPP TR

Central Semiconductor

DIODE GENERAL PURPOSE DO-201AD

0

CLLRH-04 BK

CLLRH-04 BK

Central Semiconductor

DIODE GP 400V 500MA SOD80

0

CUD10-06 BK

CUD10-06 BK

Central Semiconductor

DIODE GEN PURP 10A 600V DPAK

0

1N4446 TR

1N4446 TR

Central Semiconductor

DIODE GEN PURP 100V 150MA DO35

0

CR2-160 BK

CR2-160 BK

Central Semiconductor

THROUGH-HOLE RECTIFIER-GENERAL P

0

CR3-060GPP TR

CR3-060GPP TR

Central Semiconductor

DIODE GENERAL PURPOSE DO-201AD

0

CLLRH-06 BK

CLLRH-06 BK

Central Semiconductor

DIODE GP 600V 500MA SOD80

0

CR30U-060

CR30U-060

Central Semiconductor

DIODE GEN PURP 30A 60V DO-4

0

CRSH25-4

CRSH25-4

Central Semiconductor

DIODE SCHOTTKY 25A 40V DO-4

0

CR8U-08FP

CR8U-08FP

Central Semiconductor

DIODE RECT TO-220FP-2

0

CR2-160 TR

CR2-160 TR

Central Semiconductor

THROUGH-HOLE RECTIFIER-GENERAL P

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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