Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
CMHD4150 BK

CMHD4150 BK

Central Semiconductor

DIODE GEN PURP 50V 250MA SOD123

0

CSICD10-650 TR13

CSICD10-650 TR13

Central Semiconductor

DIODE SCHOTTKY 650V 10A DPAK

0

CR5F-010 BK

CR5F-010 BK

Central Semiconductor

DIODE GEN PURP 100V 5A DO201AD

0

UF4003 BK

UF4003 BK

Central Semiconductor

DIODE GEN PURP 200V 1A DO41

0

CMHD3595 BK

CMHD3595 BK

Central Semiconductor

DIODE GEN PURP 150V 150MA SOD123

0

CR3F-060 TR

CR3F-060 TR

Central Semiconductor

DIODE GEN PURP 600V 3A DO201AD

0

1N4005 BK

1N4005 BK

Central Semiconductor

DIODE GEN PURPOSE DO41

0

CN4157 TR

CN4157 TR

Central Semiconductor

DIODE GEN PURP 20V DO35

0

1N4002G BK

1N4002G BK

Central Semiconductor

DIODE GEN PURPOSE DO41

0

1N4003 BK

1N4003 BK

Central Semiconductor

DIODE GEN PURPOSE DO41

0

1N4002 TR

1N4002 TR

Central Semiconductor

DIODE GEN PURPOSE DO41

0

1N4006 TR

1N4006 TR

Central Semiconductor

DIODE GEN PURP 800V 1A DO41

0

1N34A BK

1N34A BK

Central Semiconductor

DIODE GEN PURP 75V 50MA DO7

0

CN5179 BK

CN5179 BK

Central Semiconductor

DIODE GEN PURP 20V DO35

0

CN649 BK

CN649 BK

Central Semiconductor

DIODE GP 600V 400MA DO-41SP

0

1N4001 BK

1N4001 BK

Central Semiconductor

DIODE GEN PURPOSE DO41

0

1N4007GPP TR

1N4007GPP TR

Central Semiconductor

DIODE GEN PURP 1KV 1A DO41

0

1N485B TR

1N485B TR

Central Semiconductor

DIODE GP 200V 200MA DO204AL

0

1N4006G BK

1N4006G BK

Central Semiconductor

DIODE GEN PURPOSE DO41

0

UF4006 BK

UF4006 BK

Central Semiconductor

DIODE GEN PURP 800V 1A DO41

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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