Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
BYV29-600,127

BYV29-600,127

WeEn Semiconductors Co., Ltd

NOW WEEN - BYV29-600 - ULTRAFAST

5070

BYV10X-600PQ

BYV10X-600PQ

WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 10A TO220-2

27

BYW29E-100,127

BYW29E-100,127

WeEn Semiconductors Co., Ltd

NOW WEEN - BYW29E-100 - ULTRAFAS

8351

BYV25FD-600,118

BYV25FD-600,118

WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 5A DPAK

185

NXPSC04650B6J

NXPSC04650B6J

WeEn Semiconductors Co., Ltd

DIODE SCHOTTKY 650V 4A D2PAK

3180

BYT79-500,127

BYT79-500,127

WeEn Semiconductors Co., Ltd

DIODE GEN PURP 500V 14A TO220AC

4861

BYV10-600PQ

BYV10-600PQ

WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 10A TO220AC

3946

MUR860J

MUR860J

WeEn Semiconductors Co., Ltd

ULTRAFAST POWER DIODE

11727

NXPSC06650B6J

NXPSC06650B6J

WeEn Semiconductors Co., Ltd

DIODE SCHOTTKY 650V 6A D2PAK

3200

BYC8B-600PJ

BYC8B-600PJ

WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 8A D2PAK

0

BYV29X-500,127

BYV29X-500,127

WeEn Semiconductors Co., Ltd

NOW WEEN - BYV29X-500 - ULTRAFAS

10056

NXPSC10650D6J

NXPSC10650D6J

WeEn Semiconductors Co., Ltd

DIODE SCHOTTKY 650V 10A DPAK

7490

WNSC10650T6J

WNSC10650T6J

WeEn Semiconductors Co., Ltd

SILICON CARBIDE POWER DIODE

3000

BYC8X-600,127

BYC8X-600,127

WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 8A TO220FP

4022

BYV79E-200,127

BYV79E-200,127

WeEn Semiconductors Co., Ltd

DIODE GEN PURP 200V 14A TO220AC

1401

BYT79X-600,127

BYT79X-600,127

WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 15A TO220F

4469

NXPSC086506Q

NXPSC086506Q

WeEn Semiconductors Co., Ltd

DIODE SCHOTTKY 650V 8A TO220AC

3000

WNSC06650T6J

WNSC06650T6J

WeEn Semiconductors Co., Ltd

SILICON CARBIDE POWER DIODE

3000

BYT79-600,127

BYT79-600,127

WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 15A TO220AC

2736

NXPSC106506Q

NXPSC106506Q

WeEn Semiconductors Co., Ltd

DIODE SCHOTTKY 650V 10A TO220AC

3000

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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