Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
UJ3D06508TS

UJ3D06508TS

UnitedSiC

650V 8A SIC SCHOTTKY DIODE G3, T

994

UJ3D06510TS

UJ3D06510TS

UnitedSiC

650V 10A SIC SCHOTTKY DIODE G3,

320

UJ3D1725K2

UJ3D1725K2

UnitedSiC

1700V 25A SIC SCHOTTKY DIODE G3,

589

UJ3D1210TS

UJ3D1210TS

UnitedSiC

1200V 10A SIC SCHOTTKY DIODE G3,

991

UJ3D1205TS

UJ3D1205TS

UnitedSiC

1200V 5A SIC SCHOTTKY DIODE G3,

982

UJ3D1210K2

UJ3D1210K2

UnitedSiC

1200V 10A SIC SCHOTTKY DIODE G3,

598

UJ3D1250K2

UJ3D1250K2

UnitedSiC

1200V 50A SIC SCHOTTKY DIODE G3,

437

UJ3D06512TS

UJ3D06512TS

UnitedSiC

650V 12A SIC SCHOTTKY DIODE G3,

2754

UJ3D06504TS

UJ3D06504TS

UnitedSiC

650V 4A SIC SCHOTTKY DIODE G3, T

943

UJ3D06516TS

UJ3D06516TS

UnitedSiC

650V 16A SIC SCHOTTKY DIODE G3,

998

UJ3D06506TS

UJ3D06506TS

UnitedSiC

650V 6A SIC SCHOTTKY DIODE G3, T

996

UJ3D06520TS

UJ3D06520TS

UnitedSiC

650V 20A SIC SCHOTTKY DIODE G3,

988

UJ3D1220K2

UJ3D1220K2

UnitedSiC

1200V 20A SIC SCHOTTKY DIODE G3,

591

UJ3D06530TS

UJ3D06530TS

UnitedSiC

650V 30A SIC SCHOTTKY DIODE G3,

968

UJ3D1202TS

UJ3D1202TS

UnitedSiC

1200V 2A SIC SCHOTTKY DIODE G3,

915

UJ3D1250K

UJ3D1250K

UnitedSiC

1200V 50A SIC SCHOTTKY DIODE G3,

553

UJ3D1220KSD

UJ3D1220KSD

UnitedSiC

1200V 20A SIC SCHOTTKY DIODE G3,

660

UJ3D06520KSD

UJ3D06520KSD

UnitedSiC

650V 20A SIC SCHOTTKY DIODE G3,

432

UJ3D1210KSD

UJ3D1210KSD

UnitedSiC

1200V 10A SIC SCHOTTKY DIODE G3,

576

UJ3D1210KS

UJ3D1210KS

UnitedSiC

1200V 10A SIC SCHOTTKY DIODE G3,

600

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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