Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
SR804 A0G

SR804 A0G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 40V 8A DO201AD

0

MUR190A R0G

MUR190A R0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 900V 1A DO204AL

0

MUR4L20 R0G

MUR4L20 R0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 4A DO201AD

0

RS1MFS MXG

RS1MFS MXG

TSC (Taiwan Semiconductor)

DIODE, FAST, 1A, 1000V

0

SF3008PTHC0G

SF3008PTHC0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 30A TO247AD

0

SF18GHB0G

SF18GHB0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 1A DO204AL

0

RS1DHM2G

RS1DHM2G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 1A DO214AC

0

SR003 R0G

SR003 R0G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 30V 500MA DO204AL

0

S1AHM2G

S1AHM2G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 50V 1A DO214AC

0

ES1BFS M3G

ES1BFS M3G

TSC (Taiwan Semiconductor)

35NS, 1A, 100V, SUPER FAST RECOV

7000

HS1KL RQG

HS1KL RQG

TSC (Taiwan Semiconductor)

DIODE GEN PURP 800V 1A SUB SMA

0

1N5397GHR0G

1N5397GHR0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 1.5A DO204AC

0

SK82C R7G

SK82C R7G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 20V 8A DO214AB

0

SF27G R0G

SF27G R0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 500V 2A DO204AC

0

SS310LHR3G

SS310LHR3G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 100V 3A SUB SMA

0

S1M R3G

S1M R3G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 1KV 1A DO214AC

8526

MUR160S R5G

MUR160S R5G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 1A DO214AA

812

SS33 R7G

SS33 R7G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 30V 3A DO214AB

0

SS23LHRVG

SS23LHRVG

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 30V 2A SUB SMA

0

S3MB R5G

S3MB R5G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 1KV 3A DO214AA

1625

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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