Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
S1JR2

S1JR2

TSC (Taiwan Semiconductor)

1A, 600V, GLASS PASSIVATED SMD R

0

S1DBHM4G

S1DBHM4G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 1A DO214AA

0

RS3JHR7G

RS3JHR7G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 3A DO214AB

0

ES3B V6G

ES3B V6G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 100V 3A DO214AB

0

SK24AHR3G

SK24AHR3G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 40V 2A DO214AC

0

HS2B M4G

HS2B M4G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 100V 2A DO214AA

0

SR006HR0G

SR006HR0G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 60V 500MA DO204AL

0

SF17G A0G

SF17G A0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 500V 1A DO204AL

0

MUR860 C0G

MUR860 C0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 8A TO220AC

388

SR202 A0G

SR202 A0G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 20V 2A DO204AC

0

S4D R7G

S4D R7G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 4A DO214AB

3343

ES1JLHM2G

ES1JLHM2G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 1A SUB SMA

0

RS1BL R3G

RS1BL R3G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 100V 800MA SUBSMA

0

HS1GL RVG

HS1GL RVG

TSC (Taiwan Semiconductor)

DIODE GEN PURP 400V 1A SUB SMA

0

S2DA M2G

S2DA M2G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 1.5A DO214AC

0

SS34L RUG

SS34L RUG

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 40V 3A SUB SMA

0

UF1D R0G

UF1D R0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 1A DO204AL

0

RS2GA R3G

RS2GA R3G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 400V 1.5A DO214AC

3389

TPMR6G S1G

TPMR6G S1G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 400V 6A TO277A

4219

SS13L R3G

SS13L R3G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 30V 1A SUB SMA

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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