Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
RS2BA R3G

RS2BA R3G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 100V 1.5A DO214AC

1598

SF36G R0G

SF36G R0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 400V 3A DO201AD

0

ESH3B R7G

ESH3B R7G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 100V 3A DO214AB

0

ES3DBHR5G

ES3DBHR5G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 3A DO214AA

232

BAV19W-G RHG

BAV19W-G RHG

TSC (Taiwan Semiconductor)

DIODE GEN PURP 100V 200MA SOD123

0

ES2JHM4G

ES2JHM4G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 2A DO214AA

0

31DF4 A0G

31DF4 A0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 400V 3A DO201AD

0

SS34LHRQG

SS34LHRQG

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 40V 3A SUB SMA

0

HS5M V6G

HS5M V6G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 5A DO214AB

0

SF17GHB0G

SF17GHB0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 500V 1A DO204AL

0

SR205HA0G

SR205HA0G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 50V 2A DO204AC

0

SK35A M2G

SK35A M2G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 50V 3A DO214AC

0

SR804HR0G

SR804HR0G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 40V 8A DO201AD

0

ES2A M4G

ES2A M4G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 50V 2A DO214AA

0

UF5JFC C0G

UF5JFC C0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 5A ITO220AC

0

HER203G R0G

HER203G R0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 2A DO204AC

0

S1BB M4G

S1BB M4G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 100V 1A DO214AA

0

1N4003GHR0G

1N4003GHR0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 1A DO204AL

0

SS32 V6G

SS32 V6G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 3A 20V DO-214AB

0

SS15L RUG

SS15L RUG

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 50V 1A SUB SMA

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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